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@Article{OliveiraUeMoHoOsAb:2008:NoPrPl,
               author = "Oliveira, Rog{\'e}rio de Moraes and Ueda, M{\'a}rio and Moreno, 
                         Beatriz and Hoshida, L. and Oswald, S. and Abramof, E.",
          affiliation = "{Instituto Nacional de Pesquisas Espaciais (INPE)} and {Instituto 
                         Nacional de Pesquisas Espaciais (INPE)} and {} and {Technological 
                         Institute of Aeronautics (ITA)} and {Leibnitz Institute for Solid 
                         State and Materials Research} and {Instituto Nacional de Pesquisas 
                         Espaciais (INPE)}",
                title = "A novel process for plasma immersion ion implantation and 
                         deposition with ions from vaporization of solid targets",
              journal = "Physica Status Solidi C: Conferences and Critical Reviews",
                 year = "2008",
               volume = "5",
               number = "4",
                pages = "893--896",
                month = "Mar.",
             keywords = "52.77.Dq, 61.05.cp, 68.55.\−,a, 78.30.Er, 82.80.Pv, plasma 
                         immersion, vaporization.",
             abstract = "A novel source for plasma immersion ion implantation and 
                         deposition (PIII\&D) was developed in order to perform surface 
                         treatment of materials with ions from vaporization of solid 
                         targets. Usually this is obtained by means of beamline ion 
                         implanters, in which three dimensional implantation requires 
                         target manipulation, or by vacuum arc discharges, in which the 
                         presence of macroparticles is the main problem to be overcame. 
                         Samples of silicon wafers immersed in a lithium plasma produced by 
                         this source were submitted to low negative high frequency pulses 
                         (3-4 kV/6 \μs/3 kHz), causing lithium implantation and 
                         deposition. A very high strain and photoluminescence measured by 
                         high resolution X-ray diffraction and Raman spectroscopy, 
                         respectively, were observed in the analyzed layers of the samples 
                         that were immersed in this plasma. XPS measurements revealed thick 
                         Li deposition for samples treated under conditions of high lithium 
                         vaporization rate. This novel process was effective for Li 
                         implantation/deposition and shows potential for PIII or PIII\&D 
                         of many different elements from solid targets as Ca, K, Mg and 
                         Al.",
                  doi = "10.1002/pssc.200778307",
                  url = "http://dx.doi.org/10.1002/pssc.200778307",
                 issn = "1610-1634",
                label = "lattes: 7698697775899601 1 OliveiraUeHoOsAb:2008:NoPrPl",
             language = "en",
           targetfile = "893_ftp.pdf",
        urlaccessdate = "15 jan. 2021"
}


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