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@Article{DelgadilloCrVaCaAlMi:1997:PhTeMo,
               author = "Delgadillo, I. and Cruz-Orea, A. and Vargas, H. and Calder{\'o}n, 
                         A. and Alvarado-Gil, J. J. and Miranda, Luiz Carlos Moura",
          affiliation = "Inst. Politecn Nalc, CTR Invest and Estudios Avanzados, PMCATA, 
                         Mexico and Instituto Nacional de Pesquisas Espaciais, 
                         Laborat{\'o}rio Associado de Sensores e Materiais",
                title = "Photoacoustic technique for monitoring the thermal properties of 
                         porous silicon",
              journal = "Progress in Electromagnetics Research",
                 year = "1997",
               volume = "36",
               number = "2",
                pages = "343--347",
                month = "Feb.",
             keywords = "Photoacoustic technique, Thermal properties, Porous silicon.",
             abstract = "The use of the photoacoustic technique to monitor the thermal 
                         properties of materials that can be obtained only as parts of 
                         multicomponent samples is illustrated by performing the thermal 
                         characterization of two porous materials: porous silicon obtained 
                         from n-type crystalline silicon through the spark process and that 
                         obtained through the electrochemical etching method. This 
                         nonseparative, and hence nondestructive, approach makes use of an 
                         effective thermal diffusivity treatment based on the analogy 
                         between thermal and electrical resistances, in combination with 
                         simplified compositional models for the corresponding 
                         multicomponent systems. The thermal parameters obtained are in 
                         agreement with existent studies concerning the composition of 
                         these materials. This approach offers the possibility of 
                         performing the thermal characterization of other porous 
                         semiconductors and analogous materials.",
           copyholder = "SID/SCD",
                 issn = "1070-4698 and 1559-8985",
           targetfile = "1997_delgadillo.pdf",
        urlaccessdate = "28 jan. 2021"
}


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