author = "Gon{\c{c}}alves, J. A. N. and Sandonato, Gilberto Marrega and 
                         Irita, Ricardo Toshiyuki",
                title = "Field emission from boron-doping polycrystalline diamond films on 
            booktitle = "Proceedings...",
                 year = "2003",
         organization = "Latin American Workshop on Plasma Physics, 10; Brazilian Meeting 
                         on Plasma Physics, 7.",
             keywords = "plasma technology.",
             abstract = "This work deals with the study and development of the boron-doped 
                         diamond field emission cathodes. These cathodes have the aim to 
                         produce the primary and neutralizer electrons for an ion thruster 
                         prototype under development at the Laborat{\'o}rio Associado de 
                         Plasma (LAP) at Instituto Nacional de Pesquisas Espaciais (INPE). 
                         The prototype has been designed to produce 1mN thrust, using argon 
                         or xenon as propellant. The ion engine is intended to be used in 
                         the discharging and attitude control of the geosynchronous 
                         satellites, such as those under development by the Space Brazilian 
                         Program. The apparent negative electron affinity (NEA) of diamond 
                         surface is interesting from both fundamental and applied 
                         perspectives. Well-understood requirements of surface chemistry 
                         and heavy p-type doping are variance with the observations of NEA 
                         characteristics from doped surface-hydrogenated diamond films. 
                         Technological interest, such as electron multipliers, cold 
                         cathodes, field emitters motivates a fundamental understanding of 
                         the mechanisms of electron emission. The unique surface chemistry 
                         of diamond emitters and environments where conventional material 
                         fail. The field emission current from boron-doped polycrystalline 
                         diamond films grown by hot-filament-assisted chemical vapor 
                         deposition (CVD) was investigated. To this end, we have performed 
                         experiments on a set of parallel plane diodes with the cathodes 
                         consisting of diamond films doped with boron at boron/carbon (B/C) 
                         rations of 2,000 4,000, 8,000, 12,000, 16,000 and 20,000ppm. The 
                         current measurements were, taken at a distance of 50 Ám, carried 
                         out as a function of voltage and indicate that the samples exhibit 
                         a negative electron affinity after exposure to hydrogen plasma and 
                         threshold voltages ranging from 30 to 40 VÁm. The film with the 
                         lowest work function was 4,000 ppm (B/C). This result is in 
                         concordance with the results achieved in electrochemical 
  conference-location = "S{\~a}o Pedro, 2003",
      conference-year = "2003",
           copyholder = "SID/SCD",
             language = "en",
           targetfile = "JANGoncalves_Poster_LAWPP2003b.pdf",
        urlaccessdate = "22 jan. 2021"