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@Article{SandovalSilvSilvLaRo:2016:ElFaAn,
               author = "Sandoval, Marcelo Alejandro Toloza and Silva, Erasmo 
                         Assump{\c{c}}{\~a}o de Andrada and Silva, A. Ferreira da and La 
                         Rocca, G. C.",
          affiliation = "{Instituto Nacional de Pesquisas Espaciais (INPE)} and {Instituto 
                         Nacional de Pesquisas Espaciais (INPE)} and {Universidade Federal 
                         da Bahia (UFBA)} and {Scuola Normale Superiore and CNISM}",
                title = "Electron g factor anisotropy in asymmetric III-V semiconductor 
                         quantum wells",
              journal = "Semiconductor Science and Technology",
                 year = "2016",
               volume = "31",
               number = "11",
                pages = "115008",
                month = "Nov.",
             keywords = "electron g factor, semiconductor quantum wells, spin-orbit 
                         interaction.",
             abstract = "The electron effective g factor tensor in asymmetric III-V 
                         semiconductor quantum wells (AQWs) and its tuning with the 
                         structure parameters and composition are investigated with 
                         envelope-function theory and the 8 x 8k . p Kane model. The 
                         spin-dependent terms in the electron effective Hamiltonian in the 
                         presence of an external magnetic field are treated as a 
                         perturbation and the g factors g(perpendicular to)* and g(parallel 
                         to)*, for the magnetic field in the QW plane and along the growth 
                         direction, are obtained analytically as a function of the well 
                         width L. The effects of the structure inversion asymmetry (SIA) on 
                         the electron g factor are analyzed. For the g-factor main 
                         anisotropy Delta g = g(perpendicular to)*-g(parallel to)*. in 
                         AQWs, a sign change is predicted in the narrow well limit due to 
                         SIA, which can explain recent measurements and be useful in 
                         spintronic applications. Specific results for narrow-gap 
                         AlSb/InAs/GaSb and AlxGa1-xAsGaAs/AlyGa1-yAs AQWs are presented 
                         and discussed with the available experimental data; in particular 
                         InAs QWs are shown to not only present much larger g factors but 
                         also a larger g-factor anisotropy, and with the opposite sign with 
                         respect to GaAs QWs.",
                  doi = "10.1088/0268-1242/31/11/115008",
                  url = "http://dx.doi.org/10.1088/0268-1242/31/11/115008",
                 issn = "0268-1242",
             language = "en",
           targetfile = "sandoval_electron.pdf",
        urlaccessdate = "27 nov. 2020"
}


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