author = "Fornari, Celso Israel and Rappl, Paulo Henrique de Oliveira and 
                         Morelh{\~a}o, S{\'e}rgio Luiz and Chitta, Walmir A. and Peres, 
                         Marcelos Lima and Peixoto, Thiago R. F. and Bentmann, Hendrik and 
                         Reinert, Friedrich and Gratens, Xavier P. M. and Abramof, 
          affiliation = "{Instituto Nacional de Pesquisas Espaciais (INPE)} and {Instituto 
                         Nacional de Pesquisas Espaciais (INPE)} and {} and {} and {} and 
                         {} and {} and {} and {} and {Instituto Nacional de Pesquisas 
                         Espaciais (INPE)}",
                title = "Molecular Beam Epitaxial Growth of the Topological Insulator 
            booktitle = "Resumos...",
                 year = "2017",
         organization = "Brazilian Workshop on Semiconductor Physics, 18. (BWSP)",
             abstract = "Bismuth telluride has been recently established as a simple model 
                         system for the threedimensional topological insulator with a 
                         single Dirac cone on the surface, as determined experimentally 
                         from angle-resolved photoemission spectroscopy [1]. The 
                         conductivity measurement of the metallic surface states in Bi2Te3 
                         is hindered by the bulk conductivity due to intrinsic defects, 
                         like vacancies and anti-sites. Counter doping (Ca, Sn or Pb) is a 
                         way to control the Fermi level and suppress the bulk contribution. 
                         Intrinsic conduction through topological surface states has been 
                         also obtained in very thin insulating Bi2Te3 epitaxial films [2]. 
                         The small lattice mismatch (< 0.04 %) to bismuth telluride makes 
                         BaF2 (111) a suitable substrate to grow high-quality thin films. 
                         The molecular beam epitaxial (MBE) growth of Bi2Te3 layers on BaF2 
                         (111) has recently been reported using either separate Bi and Te 
                         solid sources [2] or Bi2Te3 and additional Te cells [3]. Depending 
                         on the growth parameters, other BixTey phases are obtained or 
                         mixed BixTey phases coexist in the same epitaxial film [4]. In 
                         this work, we report on a systematic study of the MBE growth of 
                         bismuth telluride films on BaF2 (111). The substrate temperature, 
                         the Bi2Te3 source temperature and the additional Te flux were 
                         varied in a wide range to determine the optimum growth conditions 
                         for Bi2Te3 single phase films. The structural properties of the 
                         films were investigated in situ by reflection high-energy electron 
                         diffraction and ex situ by high-resolution x-ray diffraction, 
                         x-ray reflectivity, atomic force microscopy (AFM), X ray 
                         photoelectron Spectroscopy (XPS) and Angle Resolved Photoelectron 
                         Spectroscopy (ARPES). [1] Y.L. Chen et al., Science 325, 178 
                         (2009); [2] K. Hoefer et al., PNAS 111, 14979 (2014); [3] O. Caha 
                         et al., Cryst. Growth Des. 13, 3365 (2013); [4] H. Steiner et al., 
                         J. Appl. Cryt. 47, 1889 (2014).",
  conference-location = "Maresias, SP",
      conference-year = "14-18 ago.",
             language = "en",
           targetfile = "Abramof_molecular.pdf",
        urlaccessdate = "26 nov. 2020"