abstract = "Bismuth telluride, in Bi2Te3 phase, is an archetype of 
                         three-dimensional topological insulator. This material presents 
                         topological surface states (TSS), shaped like a Dirac cone, 
                         crossing the material band gap [1]. These TSS present linear 
                         dispersion, resulting in massless Dirac fermions in the surface 
                         with extremely high Fermi velocities and bulk insulator behavior. 
                         The massless Dirac fermions possess spin-locked to the momentum 
                         and are protected from backscattering due to time reversal 
                         symmetry, which open-up several possibilities of applications in 
                         spintronics and quantum computing [2]. However, presence of 
                         structural defects in this compound changes the chemical 
                         potential, resulting in bulk conduction which overwhelms the 
                         metallic surface states, hampering these topological states from 
                         electrical measurements. By controlling the chemical potential of 
                         the sample is possible to tune from p to n, passing through a bulk 
                         insulator phase. A truly topological insulator compound must have 
                         the Fermi level located inside the material band gap, i.e., 
                         crossing only the TSS [3]. In this work, we applied a Monte Carlo 
                         epitaxial growth model to study the case of bismuth telluride. By 
                         changing the growth conditions in the model, we monitored the 
                         formation of structural defects. The computational model was 
                         validated to a set of experimental data. The simulation results 
                         were able to explain a p-to-n transition that occurs by increasing 
                         the substrate temperature in which the epitaxial films are grown. 
                         References: [1] Y.L. Chen et al., Science 325, 178 (2009); [2] Y. 
                         Ando, J. Phys. Soc. Japan. 82, 102001 (2013); [3] K. Hoefer et 
                         al., PNAS 111, 14979 (2014).",
          affiliation = "{Instituto Nacional de Pesquisas Espaciais (INPE)} and {Instituto 
                         Nacional de Pesquisas Espaciais (INPE)} and {Instituto Nacional de 
                         Pesquisas Espaciais (INPE)} and {Instituto Nacional de Pesquisas 
                         Espaciais (INPE)} and {Instituto Nacional de Pesquisas Espaciais 
               author = "Fornari, Celso Israel and Fornari, Gabriel and Rappl, Paulo 
                         Henrique de Oliveira and Abramof, Eduardo and Travelho, Jeronimo 
                         dos Santos",
                 city = "Maresias, SP",
       conferencename = "Brazilian Workshop on Semiconductor Physics, 18 (BWSP)",
                 date = "14-18 ago.",
             language = "en",
            publisher = "Instituto Nacional de Pesquisas Espaciais",
     publisheraddress = "S{\~a}o Jos{\'e} dos Campos",
           targetfile = "PosterBWSP.pdf",
                title = "Formation of structural defects during Bi2Te3 epitaxy investigated 
                         by a Monte Carlo computational model",
                 year = "2017",
        urlaccessdate = "01 dez. 2020"