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@InProceedings{Galv„oGVPMMCD:2018:SiThFi,
               author = "Galv{\~a}o, Nierrly K. A. M. and Guerino, Marciel and 
                         Vasconcelos, Get{\'u}lio de and Pessoa, Rodrigo S. and Maciel, 
                         Homero S. and Machado, Jo{\~a}o Paulo Barros and Camus, Julien 
                         and Djouadi, Mohamed Abdou",
          affiliation = "{Instituto Tecnol{\'o}gico de Aeron{\'a}utica (ITA)} and 
                         {Instituto Tecnol{\'o}gico de Aeron{\'a}utica (ITA)} and 
                         {Instituto de Estudos Avan{\c{c}}ados (IEAv)} and {Instituto 
                         Tecnol{\'o}gico de Aeron{\'a}utica (ITA)} and {Instituto 
                         Tecnol{\'o}gico de Aeron{\'a}utica (ITA)} and {Instituto 
                         Nacional de Pesquisas Espaciais (INPE)} and {Universit{\'e} de 
                         Nantes} and {Universit{\'e} de Nantes}",
                title = "Sic thin film growth by hipims technique aiming graphene 
                         synthesis",
                 year = "2018",
         organization = "Encontro Nacional de F{\'{\i}}sica da Mat{\'e}ria Condensada 
                         (ENFMC)",
             abstract = "Currently, the SiC has been highlighted in the field of 
                         two-dimensional materials. SiC wafer substrates are commonly used 
                         to carry out investigations on synthesis of graphene by thermal 
                         decomposition process. Under certain annealing conditions, the SiC 
                         crystals are decomposed. At the process, the Si sublimation occurs 
                         and the remaining carbon atoms form the epitaxial graphene layer 
                         [1-2]. Usually this process takes place using induction furnaces 
                         at vacuum or at atmospheric pressure with an inert gas flow [3]. 
                         The kinetics of formation, the structure and properties of 
                         graphene are influenced by the parameters of the heating process 
                         and also by the orientation and terminated face of the SiC wafer 
                         substrate [4]. This process has been successful to grow graphene 
                         layers on SiC but it involves high cost of material. Aiming a 
                         low-cost solution, in this work we propose the use of SiC thin 
                         films grown by plasma deposition technique using a high-power 
                         impulse magnetron sputtering (HiPMS) source. Recently, the use of 
                         CO2 laser as a source of heating for graphene formation from 
                         single crystal of SiC and SiC particles have been done [5]. The 
                         use of this technique is still new and unexplored and, to the best 
                         of our knowledge, the technical feasibility using SiC thin films 
                         was not reported. Herein, the thermal-decomposition was carried by 
                         two techniques: (i) carbon dioxide laser beam heating without 
                         vacuum or controlled atmosphere and (ii) furnace using work 
                         pressure 10\−7 Torr. For thermal decomposition using 
                         furnace, a layer of Ni film was deposited on top of the SiC film. 
                         Contrary to that observed with graphene grown on the single 
                         crystal SiC wafer [4], using SiC thin films the graphene grows 
                         without the requirement of a (Si-C) face-termination. The obtained 
                         films were characterized by chemical, structural, morphological 
                         and electrical analysis using Raman spectroscopy, atomic force 
                         microscopy, and 4 points probe method.",
  conference-location = "Foz do Igua{\c{c}}u, PR",
      conference-year = "06-11 maio",
             language = "en",
        urlaccessdate = "04 dez. 2020"
}


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