author = "Fornari, Celso Israel and Rappl, Paulo Henrique de Oliveira and 
                         Morelh{\~a}o, S. L. and Fornari, Gabriel and Travelho, 
                         Jer{\^o}nimo dos Santos and Pirralho, M. J. P. and Pena, F. S. 
                         and Peres, M. L. and Abramof, Eduardo",
          affiliation = "{Instituto Nacional de Pesquisas Espaciais (INPE)} and {Instituto 
                         Nacional de Pesquisas Espaciais (INPE)} and {Universidade de 
                         S{\~a}o Paulo (USP)} and {Instituto Nacional de Pesquisas 
                         Espaciais (INPE)} and {Instituto Nacional de Pesquisas Espaciais 
                         (INPE)} and {Universidade Federal de Itajub{\'a} (UNIFEI)} and 
                         {Universidade Federal de Itajub{\'a} (UNIFEI)} and {Universidade 
                         Federal de Itajub{\'a} (UNIFEI)} and {Instituto Nacional de 
                         Pesquisas Espaciais (INPE)}",
                title = "Structural defects and electronic phase diagram of topological 
                         insulator bismuth telluride epitaxial films",
              journal = "Materials Research Express",
                 year = "2018",
               volume = "5",
               number = "11",
                pages = "116410",
             keywords = "bismuth telluride, molecular beam epitaxy, structural properties, 
                         electrical properties.",
             abstract = "In this work, bismuth telluridefilms are grown bymolecular 
                         beamepitaxy (MBE) on (111) BaF2 substrates, using 
                         stoichiometricBi2Te3 and additional Te solid sources.The growth 
                         dynamics and structural defects are investigated in detail as 
                         function of substrate temperature, Bi2Te3flux and extra Te supply, 
                         bymeans of atomic forcemicroscopy, Raman spectroscopy and 
                         reciprocal spacemapping.The growth rate increases linearly with 
                         theBi2Te3flux and the most appropriate conditions to grow 
                         high-quality Bi2Te3 single layers is found to be in a 
                         narrowwindowofMBEparameters. At low growth temperaturesTe clusters 
                         are formed, while the Te deficit increases with raising substrate 
                         temperature and decreasing deposition rate. It results in 
                         filmswithBi-richer phases due to the formation ofBi double layers 
                         in betweenBi2Te3 quintuple layers. The electronic transport 
                         properties are also studied by temperature dependent resistivity 
                         and Hall measurements. By properly changing the substrate 
                         temperature and/or the extra Te supply, the behavior of the films 
                         canvary frominsulating tometallicaswell as themajor carriers 
                         fromp- ton-type.Theelectronicphase diagram presented here provides 
                         a fast route to control the bulk conductance properties of bismuth 
                         telluride, which enables the production of intrinsic bulk 
                         insulating films. In addition, the results suggest the possibility 
                         of growing intrinsic sharp p-n junctions of Bi2Te3 by properly 
                         monitoring the occurrence of structural defects,which is the first 
                         step for practical applications of this topological 
                  doi = "10.1088/2053-1591/aadeb7",
                  url = "http://dx.doi.org/10.1088/2053-1591/aadeb7",
                 issn = "2053-1591",
             language = "en",
           targetfile = "Fornari_2018_Mater._Res._Express_5_116410-1.pdf",
        urlaccessdate = "29 nov. 2020"