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@Article{LeonPadillaTolSilSilLaR:2019:GfAnIn,
               author = "Leon Padilla, Jhon Elber and Toloza Sandoval, Marcelo Alejandro 
                         and Silva, Antonio Ferreira da and Silva, Erasmo 
                         Assump{\c{c}}{\~a}o de Andrada e and La Rocca, Giuseppe Carlo",
          affiliation = "{Universidade Federal da Bahia (UBA)} and {Universidade Federal da 
                         Bahia (UBA)} and {Universidade Federal da Bahia (UBA)} and 
                         {Instituto Nacional de Pesquisas Espaciais (INPE)} and {Scuola 
                         Normale Superiore and CNISM}",
                title = "g-factor anisotropy inversion in InGaAs 2D nanostructures",
              journal = "Physica Status Solidi B: Basic Research",
                 year = "2019",
               volume = "256",
               number = "6",
                pages = "e1800643",
                month = "June",
             abstract = "he inversion or sign change of the electron g-factor anisotropy in 
                         thin-layer semiconductor nanostructures is investigated 
                         theoretically and gauged for InGaAs asymmetric single and double 
                         quantum wells (QWs). The g-factor anisotropy in these 2D 
                         nanostructures is given by the difference between the longitudinal 
                         and transverse components; it is a fine sensor of the confining 
                         potential and in InGaAs structures it is determined by the Rashba 
                         spinorbit coupling. In the presence of structure inversion 
                         asymmetry (SIA) the g-factor anisotropy is expected to invert at a 
                         critical well width. This effect can be useful technologically and 
                         is here analyzed in detail with InGaAs/InP asymmetric multi-layer 
                         structures. The g-factor anisotropy in these structures is 
                         calculated in a fine grid around the inversion point, using 8-band 
                         kp Kane model based envelope function theory for the 
                         nanostructure, and perturbation theory for the calculation of the 
                         effective g factor. It is shown that the anisotropy inversion can 
                         be seen only in asymmetric structures with very thin layers, near 
                         the limit of no bound states allowed, and corresponding to the 
                         electron being pushed out of the confining region. The inversion 
                         point, or critical well width for the g-factor anisotropy 
                         inversion in Insulator/InGaAs/InP QWs is determined to be 
                         \≈4 nm. For double or coupled QWs it is found that the 
                         inversion can be observed only with very thin tunneling barriers 
                         around 1 nm wide.",
                  doi = "10.1002/pssb.201800643",
                  url = "http://dx.doi.org/10.1002/pssb.201800643",
                 issn = "0370-1972",
             language = "en",
           targetfile = "Padilla_et_al-2019-physica_status_solidi_(b).pdf",
        urlaccessdate = "04 dez. 2020"
}


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