author = "Amaral Junior, Miguel Angelo do and Silva, Belchior Elton Lima da 
                         and Ferreira, Neiden{\^e}i Gomes and Beloto, Antonio Fernando and 
                         Baldan, Maur{\'{\i}}cio Ribeiro",
          affiliation = "{Instituto Nacional de Pesquisas Espaciais (INPE)} and {} and 
                         {Instituto Nacional de Pesquisas Espaciais (INPE)} and {Instituto 
                         Nacional de Pesquisas Espaciais (INPE)} and {Instituto Nacional de 
                         Pesquisas Espaciais (INPE)}",
                title = "Morphological evolution of the porous silicon surface for 
                         different etching time and current density in hf-ethanol 
              journal = "Revista Brasileira de Aplica{\c{c}}{\~o}es do V{\'a}cuo on 
                 year = "2015",
               volume = "34",
               number = "3",
                pages = "89",
                 note = "{Setores de Atividade: Pesquisa e desenvolvimento 
             keywords = "Porous Sillicon, Photoluminescence, Scanning electron 
             abstract = "Porous silicon samples were obtained by the anodization etching 
                         process of a n-type silicon wafer. The pores formation was 
                         investigated taking into account the anodization time. Scanning 
                         Electron Microscopy and Optical Profilometry were used to 
                         characterize the morphology, pore size, pore depth, thickness, 
                         roughness, surface area and also the morphological evolution of 
                         porous silicon layer. The formed porous silicon layer showed a 
                         tendency to increase the pore size, pore depth, roughness and 
                         surface area as a function of the etching time. The porous silicon 
                         was obtained at different etching times and at a fixed current 
                         density. The experimental results showed that the porosity of the 
                         porous silicon prepared under different anodization times can be 
                  doi = "10.17563/rbav.v34i3.989",
                  url = "http://dx.doi.org/10.17563/rbav.v34i3.989",
                 issn = "0101-7659",
                label = "lattes: 3894119234731870 4 AmaralJrSilFerBelBal:2015:MoEvPo",
             language = "en",
        urlaccessdate = "28 nov. 2020"