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@InCollection{FornariForRapAbrTra:2018:MoCaSi,
               author = "Fornari, Celso Israel and Fornari, Gabriel and Rappl, Paulo 
                         Henrique de Oliveira and Abramof, Eduardo and Travelho, 
                         Jer{\^o}nimo dos Santos",
                title = "Monte Carlo Simulation of Epitaxial Growth",
            booktitle = "Epitaxy",
            publisher = "InTech",
                 year = "2018",
                pages = "113--129",
             keywords = "Monte Carlo simulation, molecular beam epitaxy, epitaxial growth, 
                         lattice-matched substrates.",
             abstract = "A numerical Monte Carlo (MC) model is described in detail to 
                         simulate epitaxial growth. This model allows the formation of 
                         structural defects, like substitutional defects and vacancies, and 
                         desorption of adsorbed atoms on the surface. The latter feature 
                         supports the study of epitaxial growth at very high kinetic 
                         regime. The model proposed here is applied to simulate the 
                         homoepitaxial growth of Si. The results obtained fit well to the 
                         experimental reports on (0 0 1) silicon homoepitaxy. The easy 
                         implementation of a large number of microscopic processes and the 
                         three-dimensional spatial information during the film growth 
                         suggests that the model can be applied to simulate the growth of 
                         binary, ternary, or more compounds and even the growth of 
                         superlattices and heterostructures.",
          affiliation = "{Instituto Nacional de Pesquisas Espaciais (INPE)} and {Instituto 
                         Nacional de Pesquisas Espaciais (INPE)} and {Instituto Nacional de 
                         Pesquisas Espaciais (INPE)} and {Instituto Nacional de Pesquisas 
                         Espaciais (INPE)}",
                  doi = "10.5772/intechopen.70220",
                  url = "http://dx.doi.org/10.5772/intechopen.70220",
                 isbn = "9789535138891",
                label = "lattes: 8086526958304657 2 FornariForRapAbrTra:2018:MoCaSi",
             language = "pt",
                  url = "http://www.intechopen.com/books/epitaxy/monte-carlo-simulation-of-epitaxial-growth",
        urlaccessdate = "27 nov. 2020"
}


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