Área de identificação | |
Tipo de Referência | Journal Article |
Site | plutao.sid.inpe.br |
Código do Detentor | isadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S |
Identificador | J8LNKAN8RW/3C63EQE |
Repositório | dpi.inpe.br/plutao/2012/06.21.17.26 (acesso restrito) |
Última Atualização | 2013:07.02.17.41.36 administrator |
Metadados | dpi.inpe.br/plutao/2012/06.21.17.26.18 |
Última Atualização dos Metadados | 2018:06.04.23.39.04 administrator |
DOI | 10.1016/j.vacuum.2012.03.049 |
ISSN | 0042-207X |
Rótulo | lattes: 4955583664355437 2 OliveiraVieiUeda:2012:GrZnNa |
Chave de Citação | OliveiraVieiUedaTóth:2013:GrZnNa |
Título | Growth of ZnO nanostructures on Si by means of plasma immersion ion implantation and deposition  |
Ano | 2013 |
Mês | Mar. |
Data de Acesso | 24 fev. 2021 |
Número de Arquivos | 2 |
Tamanho | 1543 KiB |
Área de contextualização | |
Autor | 1 Oliveira, Rogério de Moraes 2 Vieira, Maxson Souza 3 Ueda, Mário 4 Tóth, A |
Identificador de Curriculo | 1 8JMKD3MGP5W/3C9JJ6L 2 3 8JMKD3MGP5W/3C9JHSB |
Grupo | 1 LAP-CTE-INPE-MCTI-GOV-BR 2 CMS-ETES-SPG-INPE-MCTI-GOV-BR 3 LAP-CTE-INPE-MCTI-GOV-BR |
Afiliação | 1 Instituto Nacional de Pesquisas Espaciais (INPE) 2 3 Instituto Nacional de Pesquisas Espaciais (INPE) 4 CRC HAS, Inst Mat & Environm Chem, Budapest, Hungary. |
Endereço de e-Mail do Autor | 1 rogerio@plasma.inpe.br 2 maxson.vieira@gmail.com 3 ueda@plasma.inpe.br |
Endereço de e-Mail | maxson.vieira@gmail.com |
Revista | Vacuum |
Volume | 89 |
Número | 1 |
Páginas | 163-167 |
Tipo Secundário | PRE PI |
Nota Secundária | B1 B1 B1 B1 B2 B3 B4 |
Histórico | 2012-06-22 00:10:59 :: lattes -> secretaria.cpa@dir.inpe.br :: 2012 2012-08-31 19:13:53 :: secretaria.cpa@dir.inpe.br -> banon :: 2012 2012-09-27 14:58:38 :: banon -> administrator :: 2012 2012-10-22 01:02:30 :: administrator -> secretaria.cpa@dir.inpe.br :: 2012 2013-01-07 17:48:28 :: secretaria.cpa@dir.inpe.br -> administrator :: 2012 2013-07-02 17:31:22 :: administrator :: 2012 -> 2013 2018-06-04 23:39:04 :: administrator -> marcelo.pazos@inpe.br :: 2013 |
Área de conteúdo e estrutura | |
É a matriz ou uma cópia? | é a matriz |
Estágio do Conteúdo | concluido |
Transferível | 1 |
Tipo do Conteudo | External Contribution |
Tipo de Versão | publisher |
Palavras-Chave | AFM image, Argon glow discharges, Coated surface, Composition analysis, DC voltage, Depth analysis, Nanoscale ranges, Nanothorns, Negative voltage, Oxide cathode, Plasma based ion implantation and deposition, Plasma immersion ion implantation and deposition, Plasma particles, Room temperature, Sample holders, Si substrates, Si surfaces, UV- and, Visible photoluminescence, XRD, Zinc oxide (ZnO), Zn atoms, Zn deposition, ZnO, ZnO nanoparticles, ZnO nanostructures, ZnO on Si, Atomic force microscopy, Electric potential, Energy dispersive spectroscopy, Glow discharges, Ion implantation, Nanostructures, Photoelectrons, Photoluminescence, Photoluminescence spectroscopy, Plasma deposition, Scanning electron microscopy, Silicon, Stoichiometry, Thermionic emission, X ray diffraction, X ray photoelectron spectroscopy, Zinc, Zinc plating. |
Resumo | Crystalline zinc oxide (ZnO) nanostructures have been grown on Si substrates by means of Plasma Based Ion Implantation and Deposition (PIII&D) at a temperature of about 300 C and in the presence of an argon glow discharge. In the process a crucible filled with small pieces of metallic zinc plays the role of the anode of the discharge itself, being polarized by positive DC voltage of about 400 V. Electrons produced by thermionic emission by an oxide cathode (Ba, Sr, Ca)O impact this crucible, causing its heating and vaporization of Zn. Partial ionization of Zn atoms takes place due to collisions with plasma particles. High negative voltage pulses (7 kV/40 ms/250 Hz) applied to the sample holder causes the implantation of metallic zinc into Si surface, while Zn deposition happens between pulses. After annealing at 700 C, strong UV and various visible photoluminescence bands are observed at room temperature, as well as the presence of ZnO nanoparticles. The coated surface was characterized in detail using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), energy dispersive spectroscopy (EDS), scanning electron microscopy (SEM), atomic force microscopy (AFM) and photoluminescence (PL) spectroscopy. XRD indicated the presence of only ZnO peaks after annealing. The composition analysis by EDS revealed distinct Zn/O stoichiometry relation depending on the conditions of the process. AFM images showed the formation of columns in the nanoscale range. Topography viewed by SEM showed the formation of structures similar to cactus with nanothorns. Depth analysis performed by XPS indicated an increase of concentration of metallic Zn with increasing depth and the exclusive presence of ZnO for outer regions. PIII&D allowed to growing nanostructures of ZnO on Si without the need of a buffer layer. |
Area | FISPLASMA |
Arranjo 1 | |
Arranjo 2 | |
Conteúdo da Pasta source | não têm arquivos |
Conteúdo da Pasta agreement | não têm arquivos |
Área de condições de acesso e uso | |
Idioma | en |
Arquivo Alvo | Growth of ZnO nanostructures on Si by means of plasma immersion ion implantation and deposition.pdf |
Grupo de Usuários | administrator banon lattes marcelo.pazos@inpe.br secretaria.cpa@dir.inpe.br |
Grupo de Leitores | administrator banon marcelo.pazos@inpe.br secretaria.cpa@dir.inpe.br |
Visibilidade | shown |
Política de Arquivamento | denypublisher denyfinaldraft24 |
Permissão de Leitura | deny from all and allow from 150.163 |
Permissão de Atualização | não transferida |
Área de fontes relacionadas | |
Vinculação | Trabalho Vinculado à Tese/Dissertação |
Repositório Espelho | iconet.com.br/banon/2006/11.26.21.31 |
Unidades Imediatamente Superiores | 8JMKD3MGPCW/3ET2RFS 8JMKD3MGPCW/3F358GL |
Divulgação | WEBSCI; PORTALCAPES; COMPENDEX; SCOPUS. |
Acervo Hospedeiro | dpi.inpe.br/plutao@80/2008/08.19.15.01 |
Área de notas | |
Notas | 17th International Conference on Surface Modification of Materials by Ion Beams (SMMIB), Harbin, PEOPLES R CHINA, SEP 13-17, 2011 |
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e-Mail (login) | marcelo.pazos@inpe.br |
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