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1. Identity statement
Reference TypeJournal Article
Siteplutao.sid.inpe.br
Holder Codeisadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S
IdentifierJ8LNKAN8RW/3AFKT28
Repositorydpi.inpe.br/plutao/2011/09.22.16.22   (restricted access)
Last Update2011:10.20.10.49.29 (UTC) administrator
Metadata Repositorydpi.inpe.br/plutao/2011/09.22.16.22.35
Metadata Last Update2018:06.05.00.01.23 (UTC) administrator
DOI10.1007/s11051-011-0366-3
ISSN1388-0764
Labellattes: 3894119234731870 3 MirandaBaldBeloFerr:2011:NaInIn
Citation KeyMirandaBaldBeloFerr:2011:NaInPo
TitleNanodiamond infiltration into porous silicon through etching of solid carbon produced at different graphitization temperatures
ProjectCNPq[141221/2005-4]; Fapesp[03/13454-8]
Year2011
MonthSept.
Access Date2024, May 05
Secondary TypePRE PI
Number of Files1
Size725 KiB
2. Context
Author1 Miranda, Claudia Renata Borges
2 Baldan, M. R.
3 Beloto, Antonio Fernando
4 Ferreira, Neidenêi Gomes
Resume Identifier1
2
3 8JMKD3MGP5W/3C9JGJ8
4 8JMKD3MGP5W/3C9JHU3
Group1 CST-CST-INPE-MCT-BR
2 LAS-CTE-INPE-MCT-BR
3 LAS-CTE-INPE-MCT-BR
4 LAS-CTE-INPE-MCT-BR
Affiliation1 Instituto Nacional de Pesquisas Espaciais (INPE)
2 Instituto Nacional de Pesquisas Espaciais (INPE)
3 Instituto Nacional de Pesquisas Espaciais (INPE)
4 Instituto Nacional de Pesquisas Espaciais (INPE)
Author e-Mail Address1
2
3 beloto@las.inpe.br
4 neidenei@las.inpe.br
e-Mail Addressbeloto@las.inpe.br
JournalJournal of Nanoparticle Research
Volume13
Number9
Pages4219-4228
Secondary MarkB1_ASTRONOMIA_/_FÍSICA B1_CIÊNCIAS_BIOLÓGICAS_I B2_CIÊNCIAS_BIOLÓGICAS_III A2_ENGENHARIAS_II B2_MATERIAIS B1_QUÍMICA
History (UTC)2011-09-23 14:11:15 :: lattes -> secretaria.cpa@dir.inpe.br :: 2011
2011-11-04 12:42:22 :: secretaria.cpa@dir.inpe.br -> administrator :: 2011
2018-06-05 00:01:23 :: administrator -> marciana :: 2011
3. Content and structure
Is the master or a copy?is the master
Content Stagecompleted
Transferable1
Content TypeExternal Contribution
Version Typepublisher
KeywordsNanodiamond
Porous silicon
Chemical vapor infiltration
Reticulated vitreous carbon
Synthesis
NANOCRYSTALLINE DIAMOND FILMS
RETICULATED VITREOUS CARBON
CHEMICAL-VAPOR-DEPOSITION
HF-ACETONITRILE
GROWTH
NUCLEATION
FABRICATION
ETHANOL
SURFACE
CVI
AbstractNanocrystalline diamond (NCD) was grown on the porous silicon (PS) substrate using Reticulated Vitreous Carbon (RVC) as an additional solid carbon source. RVC was produced at different heat treatment temperatures of 1300, 1500, and 2000 °C, resulting in samples with different turbostratic carbon organizations. The PS substrate was produced by an electrochemical method. NCD film was obtained by the chemical vapor infiltration/deposition process where a RVC piece was positioned just below the PS substrate. The PS and NCD samples were characterized by Field Emission Gun-Scanning Electron Microscopy (FEG-SEM). NCD films presented faceted nanograins with uniform surface texture covering all the pores resulting in an apparent micro honeycomb structure. Raman's spectra showed the D and G bands, as well as, the typical two shoulders at 1,150 and 1,490 cm−1 attributed to NCD. X-ray diffraction analyses showed the predominant (111) diamond orientation as well as the (220) and (311) peaks. The structural organization and the heteroatom presence on the RVC surface, analyzed from X-ray photoelectron spectroscopy, showed their significant influence on the NCD growth process. The hydrogen etching released, from RVC surface, associated to carbon and/or oxygen/nitrogen amounts led to different contributions for NCD growth.
AreaFISMAT
Arrangement 1urlib.net > BDMCI > Fonds > Produção anterior à 2021 > LABAS > Nanodiamond infiltration into...
Arrangement 2urlib.net > BDMCI > Fonds > Produção anterior à 2021 > COCST > Nanodiamond infiltration into...
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4. Conditions of access and use
Languageen
Target Filemiranda.pdf
User Groupadministrator
lattes
secretaria.cpa@dir.inpe.br
Visibilityshown
Archiving Policydenypublisher denyfinaldraft12
Read Permissiondeny from all and allow from 150.163
Update Permissionnot transferred
5. Allied materials
Next Higher Units8JMKD3MGPCW/3ESR3H2
8JMKD3MGPCW/3F3T29H
DisseminationWEBSCI; PORTALCAPES; COMPENDEX.
Host Collectiondpi.inpe.br/plutao@80/2008/08.19.15.01
6. Notes
NotesSetores de Atividade: Pesquisa e desenvolvimento científico.
Empty Fieldsalternatejournal archivist callnumber copyholder copyright creatorhistory descriptionlevel format isbn lineage mark mirrorrepository nextedition orcid parameterlist parentrepositories previousedition previouslowerunit progress readergroup rightsholder schedulinginformation secondarydate secondarykey session shorttitle sponsor subject tertiarymark tertiarytype typeofwork url
7. Description control
e-Mail (login)marciana
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