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1. Identity statement
Reference TypeJournal Article
Sitemtc-m21c.sid.inpe.br
Holder Codeisadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S
Identifier8JMKD3MGP3W34R/3SR7UCP
Repositorysid.inpe.br/mtc-m21c/2019/02.28.16.11   (restricted access)
Last Update2019:02.28.16.11.45 (UTC) administrator
Metadata Repositorysid.inpe.br/mtc-m21c/2019/02.28.16.11.45
Metadata Last Update2021:03.04.02.28.20 (UTC) administrator
DOI10.1063/1.3682838
Citation KeyRossiBarrUeda:2001:NoHiVo
TitleNon-conventional high voltage pulsers for advanced plasma immersion ion implantation
Year2001
Monthmay
Access Date2024, May 05
Type of Workconference paper
Number of Files1
Size1037 KiB
2. Context
Author1 Rossi, José Osvaldo
2 Barroso de Castro, Joaquim José
3 Ueda, Mário
Group1 LAP-INPE-MCT-BR
2 LAP-INPE-MCT-BR
3 LAP-INPE-MCT-BR
Affiliation1 Instituto Nacional de Pesquisas Espaciais (INPE)
2 Instituto Nacional de Pesquisas Espaciais (INPE)
3 Instituto Nacional de Pesquisas Espaciais (INPE)
Author e-Mail Address1 jose.rossi@inpe.br
2
3 mario.ueda@inpe.br
JournalAIP Conference Proceedings
Volume563
Pages96-101
History (UTC)2019-02-28 16:12:09 :: simone -> administrator :: 2001
2021-03-04 02:28:20 :: administrator -> simone :: 2001
3. Content and structure
Is the master or a copy?is the master
Content Stagecompleted
Transferable1
Content TypeExternal Contribution
Version Typepublisher
AbstractThe treatment of surfaces by plasma immersion ion implantation requires pulsed power modulators to provide negative high voltage pulses. In general, the most commonly used modulators consist of either a pulse forming network (PFN) or a hard tube (HT) pulser. For high implant current above 100 A the former configuration is preferred because of the limited maximum current of the hard tube switch (generally a tetrode) used in the latter one. However, for a PFN generator operating with high voltage pulses it is necessary to use a pulse transformer, which is expensive and responsible for limiting the pulse rise time. In this paper we discuss this conventional technology available and propose a new circuit topology approach for applications with high current and voltage in excess of 100 kV (such as PIII process in polymers) which is cheaper and less complex to build. Also results of the PIII processing obtained in various materials (as silicon and stainless steel samples) using both types of conventional modulators are highlighted.
AreaFISPLASMA
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4. Conditions of access and use
Languageen
Target Filerossi_non.pdf
User Groupsimone
Visibilityshown
Read Permissiondeny from all and allow from 150.163
Update Permissionnot transferred
5. Allied materials
Mirror Repositoryurlib.net/www/2017/11.22.19.04.03
Next Higher Units8JMKD3MGPCW/3ET2RFS
Host Collectionurlib.net/www/2017/11.22.19.04
6. Notes
NotesLatin American Wokshop on Plasma Physics, 9., 6-7 nov. 2000, La Serna, Chile.
Empty Fieldsalternatejournal archivingpolicy archivist callnumber copyholder copyright creatorhistory descriptionlevel dissemination e-mailaddress format isbn issn keywords label lineage mark nextedition number orcid parameterlist parentrepositories previousedition previouslowerunit progress project readergroup resumeid rightsholder schedulinginformation secondarydate secondarykey secondarymark secondarytype session shorttitle sponsor subject tertiarymark tertiarytype url
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