@Article{OliveiraBeFeChBa:2014:TrPrPo,
author = "Oliveira, J. R. de and Berengue, O. M. and {J. Moro} and Ferreira,
Neidenei Gomes and Chiquito, A. J. and Baldan, Mauricio Ribeiro",
affiliation = "{Instituto Nacional de Pesquisas Espaciais (INPE)} and {} and {}
and {Instituto Nacional de Pesquisas Espaciais (INPE)} and {} and
{Instituto Nacional de Pesquisas Espaciais (INPE)}",
title = "Transport properties of policrystalline boron doped diamond",
journal = "Applied Surface Science",
year = "2014",
volume = "311",
pages = "5--8",
keywords = "diamond, BDD, Hall effect.",
abstract = "The influence of doping level in the electronic conductivity and
resistivity properties of synthetic diamondfilms grown by hot
filament chemical vapor deposition (HFCVD) was investigated. Eight
different dopinglevel concentrations varied from 500 to 30,000 ppm
were considered. The polycrystalline morphologyobserved by
scanning electron microscopy and Raman spectra was strongly
affected by the addition ofboron. The electric characterization by
Hall effect as a function of temperature and magnetic field
showedthat at sufficiently low temperatures, electrical conduction
is dominated by variable range hopping (VRH)conducting process.
The resistivity was also investigated by temperature-dependent
transport measure-ments in order to investigate the conduction
mechanism in the doped samples. The samples exhibitedthe VRH (m =
1/4) mechanism in the temperature range from 77 to 300 K. The
interface between metal,and our HFCVD diamond was also
investigated for the lower doped samples.",
doi = "10.1016/j.apsusc.2014.04.161",
url = "http://dx.doi.org/10.1016/j.apsusc.2014.04.161",
issn = "0169-4332",
label = "self-archiving-INPE-MCTI-GOV-BR",
language = "en",
targetfile = "Artigo_Jackson.pdf",
url = "http://dx.doi.org/10.1016/j.apsusc.2014.04.161",
urlaccessdate = "29 jun. 2024"
}