@Article{AraujoBeBaFeMoCh:2014:ElPrBo,
author = "Araujo, L. S. and Berengue, O. and Baldan, Mauricio Ribeiro and
Ferreira, N. and Moro, Juliano and Chiquito, A.",
affiliation = "NanO LaB-Departamento de Fisica, Universidade Federal de Sao
CarlosSaoCarlos, SP, Brazil and Faculdade de Engenharia de
Guaratingueta, Universidade Estadual J{\'u}lio de Mesquita
FilhoGuaratingueta, SP, Brazil and {Instituto Nacional de
Pesquisas Espaciais (INPE)} and {Instituto Nacional de Pesquisas
Espaciais (INPE)} and {Instituto Nacional de Pesquisas Espaciais
(INPE)} and NanO LaB-Departamento de Fisica, Universidade Federal
de Sao CarlosSaoCarlos, SP, Brazil",
title = "Electrical properties of boron doped CVD diamond after plasma
cleaning probed by capacitance-voltage profiling",
journal = "International Review of the Red Cross",
year = "2014",
volume = "1634",
number = "1",
abstract = "Doped diamond films grown by chemical vapor techniques has been
used to study hydrogen and oxygen terminated diamond. It is known
that the electrical characteristics of metal-diamond interface are
strongly affected by the diamond surface features. O2 plasma
treatment was used as a cleaning procedure for as grown diamond
samples leading to changes in the capacitance measurements after
treatment. The alteration in the characteristics of the samples
can be attributed to the surface adsorbates like hydrogen and
water vapor present in the atmosphere. The results indicates that
the O2 plasma treatment was effective in cleaning the surface
revealing the expected features of a p-type diamond film.",
doi = "10.1557/opl.2014.701",
url = "http://dx.doi.org/10.1557/opl.2014.701",
issn = "1816-3831 and 1607-5889",
label = "scopus 2015-01 AraujoBeBaFeMoCh:2014:ElPrBo",
language = "en",
urlaccessdate = "16 jun. 2024"
}