@InProceedings{SivaNetoRoBaJrCaDi:2013:ChCeDi,
author = "Siva Neto, Lauro Paulo and Rossi, J O and Barroso, Joaquim
Jos{\'e} and Jr., Ata{\'{\i}}de da Silva and Castro, P J and
Dias, Patricia",
affiliation = "{} and {Instituto Nacional de Pesquisas Espaciais (INPE)} and
{Instituto Nacional de Pesquisas Espaciais (INPE)} and {} and
{Instituto Nacional de Pesquisas Espaciais (INPE)}",
title = "Characterization of Ceramic Dielectrics for Sub-GHz Applications
in Nonlinear Transmission Lines",
booktitle = "Proceedings...",
year = "2013",
pages = "1--5",
organization = "International Microwave and Optoelectronics Conference, 15.
(SBMO/IEEE MTT-S).",
publisher = "Sociedade Brasileira de Microondas e Opto-eletr{\^o}nica",
note = "Setores de Atividade: Fabrica{\c{c}}{\~a}o de equipamentos de
inform{\'a}tica, produtos eletr{\^o}nicos e {\'o}pticos.",
keywords = "nonlinear transmission lines, nonlinear dielectrics, RF
generation.",
abstract = "Low loss dielectric materials with high permittivity and nonlinear
behavior are essential for use in capacitive non linear
transmission lines (NLTLs) for RF generation. NLTLs have a great
potential to generate solitons waves for high power microwave
applications in mobile defense platforms and satellite
communications. In this work the dielectric properties of a
piezoelectric capacitor based on lead-zirconate-titanate (PZT) was
characterized in a broadband frequency from 10 MHz to 1 GHz for
use in NLTLs. Also three commercial ceramic capacitors made of
barium titanate (BaTi03) were also assessed for comparison with
the PZT capacitor. The characterization of materials consists of
measuring the relative dielectric constant (real and imaginary
parts) as function of the applied voltage and frequency to
calculate the loss tangent of the material. The results showed
that PZT material has a better performance for use in NLTLs than
barium titanate because of its lower losses. As shown here,
however, the use of PZT and barium titanate based materials in
NLTLs are compromised by the self-resonant frequency of the
capacitors due to the inherent parasitic inductance associated to
the capacitor at high frequency.",
conference-location = "Rio de Janeiro",
conference-year = "2013",
isbn = "978-1-4799-1397-8/13",
label = "lattes: 5240243263075069 3 SivaNetoRoBaJrCaDi:2013:ChCeDi",
language = "en",
targetfile = "06646601.pdf",
url = "http://www.imoc2013.org",
volume = "1",
urlaccessdate = "16 jun. 2024"
}