@Article{ReisBeloUeda:2005:AnEfSa,
               author = "Reis, J. C. N. and Beloto, Antonio Fernando and Ueda, M{\'a}rio",
          affiliation = "Instituto Nacional de Pesquisas Espaciais, Laborat{\'o}rio 
                         Associado de Plasma (INPE.LAP) and Instituto Nacional de Pesquisas 
                         Espaciais, Laborat{\'o}rio Associado de Plasma (INPE.LAP) and 
                         Instituto Nacional de Pesquisas Espaciais, Laborat{\'o}rio 
                         Associado de Plasma (INPE.LAP)",
                title = "Annealing effects in samples of silicon implanted with helium by 
                         plasma immersion ion implantation",
              journal = "Nuclear Instruments and Methods in Physics Research Section B: 
                         Beam Interactions with Materials and Atoms",
                 year = "2005",
               volume = "240",
               number = "1-2",
                pages = "219--223",
                month = "Oct.",
             keywords = "MATERIALS PHYSICS, PIII, Ion implantation, Photoluminescence, 
                         Annealing, Insulator material technology, Nitrogen, Temperature, 
                         PIII, F{\'{\I}}SICA DE MATERIAIS, Implanta{\c{c}}{\~a}o 
                         i{\^o}nica, Fotoluminesc{\^e}ncia, Tecnologia, Nitrog{\^e}neo, 
                         Temperatura.",
             abstract = "Silicon samples were implanted with helium using plasma immersion 
                         ion implantation (PIII). The effects of implantation were analyzed 
                         by Raman spectroscopy, scanning electron microscopy (SEM), atomic 
                         force microscopy (AFM) and reflectance measurements before and 
                         after PIII, and after annealing (325 degrees C, for 30, 60 and 90 
                         min and 450 degrees C for 30 min, in nitrogen atmosphere). After 
                         annealing, large bubbles were observed from SEM images and a 
                         connection between surface microstructure and materials properties 
                         was analyzed through AFM measurements. It was observed a reduction 
                         of the reflectance and an increase of the peak intensity of the 
                         photoluminescence (PL) with the increasing of the annealing 
                         time.",
           copyholder = "SID/SCD",
                 issn = "0168-583X and 0167-5087",
             language = "en",
           targetfile = "annealing effects.pdf",
        urlaccessdate = "15 jun. 2024"
}