@Article{AlmeidaDinRosTraFer:2005:StVoSt,
author = "Almeida, E. C. and Diniz, Alessandra Ven{\^a}ncio and Rosolen, J.
M. and Trava-Airoldi, Vladimir Jesus and Ferreira, Neidenei
Gomes",
affiliation = "Instituto Nacional de Pesquisas Espaciais, Laboratorio Associado
de Sensores e Materiais (INPE, LAS)",
title = "Structural and voltammetric studies at boron-doped diamond
electrode grown on carbon felt produced from different
temperatures",
journal = "Diamond and Related Materials",
year = "2005",
volume = "14",
number = "3-7",
pages = "679--684",
month = "Mar.-Jully",
keywords = "carbon fibers, diamond films, doping p-type, electrode arrangement
/VAPOR-DEPOSITED DIAMOND, THIN-FILM ELECTRODES,
ELECTROCHEMICAL-BEHAVIOR, GRAPHITE, FIBERS, COMPOSITES,
NUCLEATION.",
abstract = "Diamond formation was studied on carbon felts (CF) substrates
produced from an organic polymer, polyacrylonitrile (PAN), at
different heat treatment temperatures (HTT). Knowledge and control
of CF structural properties have demonstrated to be very important
for growing boron-doped diamond (BDD) films on such substrates.
During the deposition, fiber etching and diamond nucleation occur
simultaneously and compete kinetically. In addition, these
processes may also be affected by the HTT of the carbon fiber
precursor. BDD/CF electrodes were produced by Hot Filament
Chemical Vapor Deposition (HFCVD) and characterized by Scanning
Electron Microscopy (SEM), Raman spectroscopy, X-Ray Diffraction
(XRD) and Cyclic Voltammetry (CV) techniques. It also discussed
the HTT influence on substrate structural properties correlated
with diamond film growth and its electrochemical response. CF
substrates were carburized in the temperatures of 1300, 1800 and
2300 K and presented respective increases in their conductivity
values. CV measurements in ferri-ferrocyanide system have
confirmed the superior properties of BDD/CF electrodes and showed
evidence of a large surface area increase, which makes them
appropriate to be used as porous electrode in different
electrochemical applications. (c) 2005 Elsevier B.V. All rights
reserved..",
copyholder = "SID/SCD",
issn = "0925-9635",
language = "en",
targetfile = "structural voltammetric.pdf",
urlaccessdate = "16 jun. 2024"
}