@Article{BaroniRSPRRAPV:2006:MoGrPa,
author = "Baroni, M. P. M. A. and Rosa, Reinaldo Roberto and Silva, A.
Ferreira and Pepe, I. and Roman, L. S. and Ramos, Fernando Manuel
and Ahuja, R. and Persson, C. and Veje, E.",
affiliation = "Instituto Nacional de Pesquisas Espaciais, Laboratorio Associado
de Computa{\c{c}}{\~a}o e Matem{\'a}tica Aplicada (INPE.LAC)
and Instituto Nacional de Pesquisas Espaciais, Laboratorio
Associado de Computa{\c{c}}{\~a}o e Matem{\'a}tica Aplicada
(INPE.LAC) and Grupo de Fisica Basica e Aplicada em Materiais
Semicondutores, Laboratorio de Propriedades Opticas, Instituto de
Fisica, Universidade Federal da Bahia and Grupo de Fisica Basica e
Aplicada em Materiais Semicondutores, Laboratorio de Propriedades
Opticas, Instituto de Fisica, Universidade Federal da Bahia and
Grupo de Dispositivos Nanoestruturados, Departamento de
F{\'{\i}}sica, Universidade Federal do Paran{\'a} and Instituto
Nacional de Pesquisas Espaciais, Laboratorio Associado de
Computa{\c{c}}{\~a}o e Matem{\'a}tica Aplicada (INPE.LAC) and
Department of Physics, Condensed Matter Theory Group, Uppsala
University and Applied Materials Physics, Department of Materials
Science and Engineering, Royal Institute of Technology and Grupo
de Fisica Basica e Aplicada em Materiais Semicondutores,
Laboratorio de Propriedades Opticas, Instituto de Fisica,
Universidade Federal da Bahia",
title = "Modeling and gradient pattern analysis of irregular SFM structures
of porous silicon",
journal = "Microelectronics Journal",
year = "2006",
volume = "37",
number = "4",
pages = "290--294",
month = "Apr.",
keywords = "porous silicon, KPZ equation, gradient pattern analysis,
nanostructures, ASYMMETRIC FRAGMENTATION PATTERNS, DYNAMICS.",
abstract = "Technological applications in opto-electronic devices have
increased the interest in characterizing porous silicon structure
patterns. Due to its physical properties, solutions from KPZ 2D
are adopted to simulate the structure of porous material interface
whose spatial characteristics are equivalent to those found in
porous silicon samples. The analysis of the simulated and real
scanning Force Microscopy (SFM) surfaces was done using the
Gradient Pattern Analysis (GPA). We found that the KPZ 2D model
presented asymmetry levels compatible with the irregular surfaces
observed by means of SFM images of pi-Si.",
copyholder = "SID/SCD",
issn = "0026-2692",
language = "en",
targetfile = "Modeling and gradient pattern analysis of irregular.pdf",
urlaccessdate = "15 jun. 2024"
}