@Article{UedaReuBelKurAbr:2006:AnEfSi,
               author = "Ueda, M{\'a}rio and Reuther, Helfried and Beloto, Antonio 
                         Fernando and Kuranaga, Carlos and Abramof, Eduardo",
          affiliation = "Instituto Nacional de Pesquisas Espaciais, Laborat{\'o}rio 
                         Associado de Plasma (INPE.LAP) and {Institute of Iom Beam Physics 
                         and Materials Research} and Instituto Nacional de Pesquisas 
                         Espaciais, Laborat{\'o}rio Associado de Sensores e Materiais 
                         (INPE.LAS) and Instituto Nacional de Pesquisas Espaciais, 
                         Laborat{\'o}rio Associado de Sensores e Materiais (INPE.LAS) and 
                         Instituto Nacional de Pesquisas Espaciais, Laborat{\'o}rio 
                         Associado de Sensores e Materiais (INPE.LAS)",
                title = "Annealing Effects on Silicon Oxynitride Layer Synthesized by N 
                         Plasma Immersion Ion Implantation",
              journal = "IEEE Transactions on Plasma Science",
                 year = "2006",
               volume = "34",
               number = "4 part 1",
                pages = "1080--1083",
                month = "Aug.",
             keywords = "Annealing, plasma immersion ion implantation, (PIII), silicon 
                         oxynitride (SiOxNy), X-ray diffraction (XRD).",
             abstract = "A silicon oxynitride layer was obtained on a polished silicon 
                         wafer surface by nitrogen plasma immersion ion implantation. 
                         Oxygen is provided by the residual gas in the implantation chamber 
                         (base pressure of 3 × 10-5 mbar) and is also implanted as the main 
                         impurity. As-implanted Si samples were analyzed by high-resolution 
                         Auger electron spectroscopy (AES), which indicated the formation 
                         of a SiOxNy layer of about 30 nm with varying x and y, along the 
                         depth of the treatment layer. AES also provided concentration 
                         profiles of the implanted elements at the as-implanted stage. 
                         Annealing of samples from a batch of such oxynitrided Si samples 
                         was carried out at different temperatures ranging from 200ēC to 
                         1060ēC. The AES analysis of these annealed samples indicated a 
                         significant escape of the implanted nitrogen atoms (starting 
                         already at 200ēC), but even at 1060ēC, there was a very thin 
                         (about 12 nm) remaining layer of the silicon oxynitride, which is 
                         probably in crystalline form. Results from high-resolution X-ray 
                         diffraction measurements also corroborate the aforementioned 
                         results.",
           copyholder = "SID/SCD",
                 issn = "0093-3813",
             language = "en",
           targetfile = "Annealing effects on silicon oxynitride.pdf",
        urlaccessdate = "15 jun. 2024"
}