@Article{UedaBeRoBaGoBeAb:2001:PlImIo,
author = "Ueda, Mario and Berni, Luis Angelo and Rossi, Jos{\'e} Osvaldo
and Barroso, Joaquim Jose and Gomes, Geraldo Francisco and Beloto,
Antonio Fernando and Abramof, Eduardo",
affiliation = "Instituto Nacional de Pesquisas Espaciais, Laborat{\'o}rio
Associado de Plasmas, (INPE, LAP)",
title = "Plasma immersion ion implantation experiments at the Instituto
Nacional de Pesquisas Espaciais",
journal = "Surface and Coatings Technology",
year = "2001",
volume = "136",
number = "1-3",
pages = "28--31",
month = "Feb",
keywords = "plasma immersion ion implantation, surface modification, silicon
nitride, iron nitride, high voltage pulse generators /
HIGH-VOLTAGE, NITROGEN, SILICON.",
abstract = "Historical perspective of the development of PIII devices at the
Institute Nacional de Pesquisas Espaciais (INPE) is given,
together with the description of the present system under
operation and our overall results on this three-dimensional
implantation research. Starting with an ignitron switched pulser
(1 pulse per 3 min) and an intermittent microwave plasma, we
improved our PIII system developing a pulse forming network (PFN)
based pulser (20 Hz), 2 years later. We also improved our plasma
source towards a DC, highly stable, medium density glow discharge
system. A much faster hard tube pulser was recently incorporated
to our PIII system (670 Hz) allowing us to achieve good
implantation results in different materials. Presently, we are
testing a recently purchased RUP-4 commercial pulser to obtain are
prevented, 1.1 kHz, square pulses for new experiments in this
active field of PIII research. (C) 2001 Elsevier Science B.V. AU
rights reserved.",
copyholder = "SID/SCD",
issn = "0257-8972",
language = "en",
targetfile = "50.pdf",
urlaccessdate = "16 jun. 2024"
}