@Article{UedaBeloReutPara:2001:FoSiSi,
               author = "Ueda, Mario and Beloto, Antonio Fernando and Reuther, H. and 
                         Parascandola, S.",
          affiliation = "Instituto Nacional de Pesquisas Espaciais, Laborat{\'o}rio 
                         Associado de Plasmas, (INPE, LAP)",
                title = "Plasma immersion ion implantation of nitrogen in Si: formation of 
                         SiO2, Si3N4 and stressed layers under thermal and sputtering 
                         effects",
              journal = "Surface and Coatings Technology",
                 year = "2001",
               volume = "136",
               number = "1-3",
                pages = "244--248",
                month = "Feb",
             keywords = "plasma immersion ion implantation, silicon nitride, surface 
                         modification, Auger electron spectroscopy.",
             abstract = "Plasma immersion ion implantation (PIII) of nitrogen in silicon 
                         (Si) wafers was carried out using a de glow discharge plasma 
                         source and a hard tube pulser. Ion irradiation times ranging from 
                         3 to 60 min were used to accumulate different doses. Surface 
                         analysis of these samples was carried out by Auger electron 
                         spectroscopy (AES), revealing a high atomic concentration of 
                         nitrogen (up to 60%) in the as-implanted Si wafer, besides the 
                         presence of different impurities as oxygen and carbon in 
                         significant quantities. Depth profiles of these elements were 
                         obtained as well as of compound species as SiO2 and Si3N4, using 
                         this high-energy resolution AES. Comparing the concentration 
                         profiles of implanted nitrogen in Si and the corresponding 
                         retained doses in these samples, it was possible to understand the 
                         thermal and sputtering effects in our present PIII experiment. 
                         High-resolution XRD results corroborate the formation of highly 
                         stressed layers in the as-implanted substrates. These experimental 
                         results are compared to simulations obtained by TRIDYN code. (C) 
                         2001 Elsevier Science B.V. All rights reserved.",
           copyholder = "SID/SCD",
                 issn = "0257-8972",
             language = "en",
           targetfile = "51.pdf",
        urlaccessdate = "15 jun. 2024"
}