@Article{DinizFerrCoraTrav:2002:BoDoDi,
author = "Diniz, Alessandra Ven{\^a}ncio and Ferreira, Neidenei Gomes and
Corat, Evaldo Jos{\'e} and Trava-Airoldi, Vladimir Jesus",
affiliation = "ITA, S{\~a}o Jos{\'e} dos Campos - SP",
title = "Boron doped diamond thin films on large area Ti6AL4V substrates
for electrochemical application",
journal = "Materials Research",
year = "2002",
volume = "6",
number = "1",
pages = "57--61",
month = "jan./fev.",
keywords = "boron doped-diamond, Ti6AL4V, electrochemistry.",
abstract = "Boron doped diamond thin films were grown on titanium alloy
substrates (Ti6Al4V) with 36 × 35 × 1.3 mm at 873-933 K at 6.5 ×
103 Pa during 8 h by hot filament CVD assisted technique. The
boron source was obtained from a H2 line forced to pass through a
bubbler containing B2O3 dissolved in methanol (BC = 6000 ppm). The
films were grown on both sides of perforated and non-perforated
substrates. Emphasis for diamond growing on perforated substrates
have been done in order to increase the active surface area and
hereafter to promote an easier electrolyte flow for wastewater
treatment. The electrode performance was determined by cyclic
voltammetry measurements in KCl, KNO3, Na2SO4, HCl, HNO3 and H2SO4
solutions and the reversibility behavior of the Fe(CN)63-/4- at
the Ti6AL4V/Diamond electrode were studied. Also, Scaning Electron
Microcopy and Raman Scattering Spectroscopy were used for
morphology and diamond quality evaluation, respectively.",
copyholder = "SID/SCD",
isbn/issn = "1516-1439",
issn = "1516-1439",
language = "en",
targetfile = "v6n1a11.pdf",
urlaccessdate = "16 jun. 2024"
}