@Article{FerreiraAbrCorLeiVJ:2001:StStHF,
               author = "Ferreira, Neidenei Gomes and Abramof, Eduardo and Corat, Evaldo 
                         Jose and Leite, Nelia Ferreira and VJ, Trava-Airoldi",
                title = "Stress study of HFCVD boron-doped diamond films by X-ray 
                         diffraction measurements",
              journal = "Diamond and Related Materials",
                 year = "2001",
               volume = "10",
               number = "3-7",
                pages = "750--754",
                month = "march-july",
             keywords = "diamond, boron doping, stress, X-ray diffraction.",
             abstract = "Stress analysis on chemical vapor deposition (CVD) diamond films 
                         has demonstrated an apparent disagreement among various 
                         researchers in recent works even for similar deposition 
                         conditions. The type and the value of stress have shown a strong 
                         dependence on film thickness, which can be attributed to columnar 
                         growth and grain size and boundaries. X-Ray diffraction techniques 
                         appeared to be more suitable to study these effects and permit the 
                         evaluation of the average stress in larger sample areas when 
                         compared with micro-Raman spectroscopy, which feels a local strain 
                         inside the grains. In the case of boron-doped diamond films, boron 
                         incorporation on substitucional or interstitial sites can produce 
                         stresses according to the doping level. In order to investigate 
                         these effects, a series of diamond films were deposited on silicon 
                         (001) substrate in a hot filament (HF)-assisted CVD reactor at 800 
                         degreesC. The CH4 flow is kept at 0.5 seem for all experiments and 
                         the H-2 and B2O3/CH3OH/H-2 flows are controlled in order to obtain 
                         the desired B/C ratios. Stress behavior in HFCVD boron-doped 
                         diamond films has been investigated by X-ray diffraction 
                         measurements using the sin(2) psi technique. Tensile and 
                         compressive stresses have been observed and the thermal and 
                         intrinsic components have been calculated. The diamond films were 
                         characterized by scanning electron microscopy and Raman 
                         spectroscopy. (C) 2001 Elsevier Science B.V. Pdl rights 
                         reserved.",
           copyholder = "SID/SCD",
            isbn/issn = "0925-9635",
                 issn = "0925-9635",
             language = "en",
           targetfile = "stress corat.pdf",
        urlaccessdate = "29 jun. 2024"
}