@Article{GonçalvesSandIha:2002:ChBoDo,
author = "Gon{\c{c}}alves, Jos{\'e} Am{\'e}rico Neves and Sandonato,
Gilberto Marrega and Iha, K.",
affiliation = "Instituto Nacional de Pesquisas Espaciais, Laborat{\'o}rio
Associado de Plasma (INPE.LAP) and Instituto Nacional de Pesquisas
Espaciais, Laborat{\'o}rio Associado de Plasma (INPE.LAP) and
Instituto Tecnol{\'o}gico de Aeron{\'a}utica, Divis{\~a}o de
qu{\'{\i}}mica (ITA)",
title = "Characterization of boron doped CVD diamond films by Raman
spectroscopy and X-ray diffractometry",
journal = "Diamond and Related Materials",
year = "2002",
volume = "11",
number = "8",
pages = "1578--1583",
month = "Aug.",
keywords = "PLASMA, Diamond films, X-ray diffractometry, Raman spectroscopy,
Lattice parameter, PLASMA, Filmes de diamante, Raio-x,
Difractometria, Espectroscopia Raman.",
abstract = "Boron doped diamond films grown by chemical vapor deposition on
silicon (1 1 1) were measured by Raman spectroscopy and X-ray
diffractometry to investigate the crystallographic direction and
the lattice parameters of both the bSiC and diamond films with
different levels of dopant. It was observed that the level of
dopant has a significant influence on the lattice parameters for a
boronycarbon ratio of 20 000 ppm, and also that the expansion of
the lattice parameters was due to compressive thermal stress of
diamond films.",
copyholder = "SID/SCD",
isbn/issn = "0925-9635",
issn = "0925-9635",
language = "en",
targetfile = "characterization.pdf",
urlaccessdate = "29 jun. 2024"
}