@InProceedings{GonçalvesSMCBPCBB:2003:OSRaDo,
               author = "Gon{\c{c}}alves, J. A. N. and Sandonato, Gilberto Marrega and 
                         Mel{\'e}ndrez, R. and Chernov, V. and Bernal, R. and Pedroza, M. 
                         and Cruz- V{\'a}zquez, C. and Brown, F. and Barbosa-Flores, M.",
                title = "OSL radiation dosimetry using boron doped CVD diamond films.",
            booktitle = "Proceedings...",
                 year = "2003",
                pages = "13",
         organization = "European Conference on Luminescent Detectors and Transformers of 
                         Ionizing Radiation, Prague, 5.",
            publisher = "INPE",
             keywords = "OSL, radiation, CVD.",
             abstract = "The optically stimulated luminescence (OSL) properties of 
                         chemically vapor deposited (CVD) boron doped diamond films exposed 
                         to beta radiation were investigated. Diamond thin films deposited 
                         on silicon (111) containing a B/C ratio of 2 000, 4 000, 8 000, 12 
                         000 and 20 000 ppm were exposed to a beta-ray dose of 0.8 .3000 
                         Gy. After stimulation with 470 nm light the OSL decay curve was 
                         measured and found it to be proportional to the dose exposure. The 
                         thermoluminescence(TL) glow curve indicate the existence of main 
                         charge carriers traps around 150 and 250 ºC for a diamond film 
                         with B/C ratio of 12 000. The OSL emission appears to originate 
                         from charge trapped at the 150 ºC glow peak. The results indicate 
                         that CVD diamond films performs well as OSL dosemeter for ionizing 
                         radiation; however additional investigation is needed in order to 
                         fully understand the nature of the trapping and recombination 
                         mechanism responsible for the OSL dosimetric properties. This work 
                         was supported by Fundacao de Amparo a Pesquisa do Estado de Sao 
                         Paulo (FAPESP).We acknowledge financial support from SEP and 
                         Conacyt grants No.36521, 37641 and 32069.",
  conference-location = "Czech Republic",
      conference-year = "2003",
           copyholder = "SID/SCD",
             language = "en",
                  ibi = "sid.inpe.br/marciana/2004/03.30.08.20",
                  url = "http://urlib.net/ibi/sid.inpe.br/marciana/2004/03.30.08.20",
           targetfile = "OSL Radiation.pdf",
        urlaccessdate = "29 jun. 2024"
}