@Article{AbramofBelGomBerReu:2000:AnXrRo,
               author = "Abramof, Eduardo and Beloto, Antonio Fernando and Gomes, Geraldo 
                         F. and Berni, Luis Angelo and Reuther, H.",
          affiliation = "Laboratorio Associado de Sensores e Materiais, Instituto Nacional 
                         de Pesquisas Espaciais, CP515, 12201-970, S~ao Jose dos Campos and 
                         Research Center Rossendorf, Institute of Ion Beam Physics and 
                         Materials Research, Dresden, Germany",
                title = "Analysis of X-ray rocking curves in (0 0 1) silicon crystals 
                         implanted with nitrogen by plasma immersion ion implantation",
              journal = "Nuclear Instruments and Methods in Physics Research Section B: 
                         Beam Interactions with Materials and Atoms",
                 year = "2000",
               volume = "161",
                pages = "1054--1057",
             keywords = "High resolution X-ray di€,raction, Plasma immersion ion 
                         implantation, Surface analysis, Silicon crystals.",
             abstract = "High-resolution X-ray diraction methods have been used to 
                         characterize nitrogen-doped silicon obtained by plasma immersion 
                         ion implantation (PIII). The Si wafers were implanted with the 
                         plasma potential controlled at 70 V, and a plasma density of 1:5 
                         1010 cm{\"y}3. The high voltage pulser was operated with peak 
                         voltage of 10 kV, 6 ls pulse duration and repetition frequency of 
                         20 Hz. Auger electron spectroscopy (AES) measurements were carried 
                         out revealing successful implantation of ions with accumulated 
                         nitrogen dose of 1:5 1017 cm{\"y}2. The (0 0 4) Si rocking curve 
                         (x-scan) was measured in a high resolution X-ray diractometer 
                         equipped with a Ge(2 2 0) four crystal monochromator before and 
                         after implantation. A small distortion of the Si(0 0 4)-rocking 
                         curve was clearly observed for the as-implanted sample. This 
                         rocking curve was simulated by dynamical theory of X-ray 
                         diraction, assuming a Gaussian strain distribution through the 
                         implanted region and using the data from the nitrogen proŽle 
                         obtained from the Auger measurements. With these assumptions, a 
                         good agreement between the measured and simulated rocking curves 
                         was obtained. {\'O} 2000 Elsevier Science B.V. All rights 
                         reserved.",
           copyholder = "SID/SCD",
                 issn = "0168-583X and 0167-5087",
             language = "en",
           targetfile = "analysis of x-ray.pdf",
        urlaccessdate = "16 jun. 2024"
}