@Article{AbramofHingPeseSitt:1991:XRRoCu,
author = "Abramof, Eduardo and Hingerl, K. and Pesek, A. and Sitter, H.",
affiliation = "ABRAMOF E (reprint author), UNIV LINZ, INST EXPTL PHYS, LINZ,
A-4040 AUSTRIA",
title = "X-Ray Rocking Curve Characterization of Znte Layers Grown on Gaas
By Hot-Wall Epitaxy",
journal = "Semiconductor Science and Technology",
year = "1991",
volume = "6",
number = "9",
pages = "A80--A82",
month = "Sept.",
abstract = "The influence of the (100) GaAs substrate preheating process on
the crystalline quality of ZnTe epilayers grown by hot-wall
epitaxy has been investigated. For preheating temperatures higher
than 560-degrees-C and preheating times longer than 15 min, all
layers were monocrystalline and grew in the [100] direction. The
FWHM of the x-ray rocking curves were measured as a function of
the preheating temperature and showed a minimum of 107 arcsec
around 600-degrees-C. The dependence of the FWHM on the ZnTe layer
thickness has also been determined. It decreases from 800 arcsec
to 200 arcsec for an increase in the layer thickness from 1 to
5-mu-m and saturates at 100 arcsec for layers thicker than 6-mu-m.
The layers showed an excellent homogeneity with a variation of 2%
in the FWHM measured in different spots along the layer diagonal.
The surface morphology was mirror-like and showed elongated
textures. The resistivity of the layers at room temperature was 5
x 10(2) OMEGA-cm.",
copyholder = "SID/SCD",
isbn/issn = "0268-1242",
issn = "0268-1242",
language = "en",
targetfile = "0268-1242_6_9A_014.pdf",
urlaccessdate = "16 jun. 2024"
}