@Article{FerreiraAbraCoraTrav:2003:ReStCr,
               author = "Ferreira, Neidenei Gomes and Abramof, Eduardo and Corat, Evaldo 
                         Jos{\'e} and Trava-Airoldi, Vladimir Jesus",
          affiliation = "{Instituto Nacional de Pesquisas Espaciais (INPE)} and {Instituto 
                         Nacional de Pesquisas Espaciais (INPE)} and {Instituto Nacional de 
                         Pesquisas Espaciais (INPE)} and {Instituto Nacional de Pesquisas 
                         Espaciais (INPE)}",
                title = "Residual stresses and crystalline quality of heavily boron-doped 
                         diamond films analysed by micro-Raman spectroscopy and X-ray 
                         diffraction",
              journal = "Carbon",
                 year = "2003",
               volume = "41",
               number = "6",
                pages = "1301--1308",
             keywords = "diamond, doping, Raman spectroscopy, X-ray diffraction, 
                         thin-films, cvd, strain, electrodes, growth, plasma, state.",
             abstract = "X-ray diffraction analysis and micro-Raman spectroscopy 
                         measurements have been used for stress studies on HFCVD diamond 
                         films with different levels of boron doping. The boron 
                         incorporation in the film varied in the range 10(18)-10(21) 
                         boron/cm(3). The grain size, obtained from SEM images, showed 
                         grains with 2-4-mum average size, which decreases when the doping 
                         level increases. The thickness of the films obtained by SEM 
                         cross-section view decreased from 8 to 5 Rut as the doping level 
                         increased from 0 (undoped film) to 10(21) boron/cm(3). The total 
                         residual stress was determined by measuring, for each sample. the 
                         (331) diamond Bragg diffraction peak for psi-values ranging from 
                         -60degrees to +60degrees, and applying the sin(2) psi method. For 
                         the micro-Raman spectroscopy the spectral analysis performed on 
                         each sample allowed the determination of the residual stress. from 
                         the diamond Raman peak shifts, and also the diamond purity, which 
                         decreases from 99 to 75% as the doping level increases. The type 
                         and magnitude of the residual stress obtained from X-ray and 
                         micro-Raman measurements agreed well only for undoped film, 
                         disagreeing when the doping level increased. We attributed this 
                         discrepancy to the domain size characteristic of each technique.",
           copyholder = "SID/SCD",
                  doi = "10.1016/S0008-6223(03)00071-X",
                  url = "http://dx.doi.org/10.1016/S0008-6223(03)00071-X",
                 issn = "0008-6223",
             language = "en",
           targetfile = "1-s2.0-S000862230300071X-main.pdf",
        urlaccessdate = "16 jun. 2024"
}