@Article{FerreiraAbraCoraTrav:2003:ReStCr,
author = "Ferreira, Neidenei Gomes and Abramof, Eduardo and Corat, Evaldo
Jos{\'e} and Trava-Airoldi, Vladimir Jesus",
affiliation = "{Instituto Nacional de Pesquisas Espaciais (INPE)} and {Instituto
Nacional de Pesquisas Espaciais (INPE)} and {Instituto Nacional de
Pesquisas Espaciais (INPE)} and {Instituto Nacional de Pesquisas
Espaciais (INPE)}",
title = "Residual stresses and crystalline quality of heavily boron-doped
diamond films analysed by micro-Raman spectroscopy and X-ray
diffraction",
journal = "Carbon",
year = "2003",
volume = "41",
number = "6",
pages = "1301--1308",
keywords = "diamond, doping, Raman spectroscopy, X-ray diffraction,
thin-films, cvd, strain, electrodes, growth, plasma, state.",
abstract = "X-ray diffraction analysis and micro-Raman spectroscopy
measurements have been used for stress studies on HFCVD diamond
films with different levels of boron doping. The boron
incorporation in the film varied in the range 10(18)-10(21)
boron/cm(3). The grain size, obtained from SEM images, showed
grains with 2-4-mum average size, which decreases when the doping
level increases. The thickness of the films obtained by SEM
cross-section view decreased from 8 to 5 Rut as the doping level
increased from 0 (undoped film) to 10(21) boron/cm(3). The total
residual stress was determined by measuring, for each sample. the
(331) diamond Bragg diffraction peak for psi-values ranging from
-60degrees to +60degrees, and applying the sin(2) psi method. For
the micro-Raman spectroscopy the spectral analysis performed on
each sample allowed the determination of the residual stress. from
the diamond Raman peak shifts, and also the diamond purity, which
decreases from 99 to 75% as the doping level increases. The type
and magnitude of the residual stress obtained from X-ray and
micro-Raman measurements agreed well only for undoped film,
disagreeing when the doping level increased. We attributed this
discrepancy to the domain size characteristic of each technique.",
copyholder = "SID/SCD",
doi = "10.1016/S0008-6223(03)00071-X",
url = "http://dx.doi.org/10.1016/S0008-6223(03)00071-X",
issn = "0008-6223",
language = "en",
targetfile = "1-s2.0-S000862230300071X-main.pdf",
urlaccessdate = "29 jun. 2024"
}