@Article{SilvaFraYokFerCor:2002:SyRaXr,
               author = "Silva, Leide Lili Gon{\c{c}}alves da and Franco, Margareth K. and 
                         Yokaichiya, Fabiano and Ferreira, Neidenei Gomes and Corat, Evaldo 
                         Jos{\'e}",
          affiliation = "Instituto Nacional de Pesquisas Espaciais, Laborat{\'o}rio 
                         Associado de Sensores e Materiais (INPE.LAS) and {Laborat{\'o}rio 
                         Nacional de Luz Sincotron (LNLS)} and {Universidade Estadual de 
                         Campinas (UNICAMP)} and {Instituto Nacional de Pesquisas Espaciais 
                         (INPE)} and {Instituto Nacional de Pesquisas Espaciais (INPE)}",
                title = "Synchrotron radiation X-ray analysis of boron-doped diamond films 
                         grown by hot-filament assisted chemical vapor deposition",
              journal = "Diamond and Related Materials",
                 year = "2002",
               volume = "11",
               number = "2",
                pages = "153--159",
                month = "Feb",
             keywords = "materials physics, boron-doped diamond, synchrotron radiation, 
                         X-ray diffraction, diamante, radia{\c{c}}{\~a}o, 
                         difra{\c{c}}{\~a}o de raio X.",
             abstract = "This paper presents a synchrotron X-ray radiation analysis of 
                         boron-doped diamond films grown by hot-filament assisted chemical 
                         vapor deposition (HFCVD). The diamond films were grown at 
                         different doping levels with the introduction of boron to the gas 
                         mixture by bubbling hydrogen in a B2O3 solution in methanol. The 
                         B/C ratio in methanol varied from 2000 to 20 000 ppm and the gas 
                         flow rates were controlled so that boron incorporation to the film 
                         varied in the range from 10(18) to 10(21) boron/ cm(3). All other 
                         process parameters were kept unchanged to allow comparison only of 
                         the influence of the doping level. The film. analyses were 
                         performed at the X-ray diffraction beamline of the Laboratorio 
                         Nacional de Luz Sincrotron - LNLS, Brazil. The Debye-Scherrer 
                         configuration was used in this study. A high intensity 
                         monochromatic beam at lambda = 1.46 A was used and an excellent 
                         signal to noise ratio was obtained for 2theta varying from 
                         20degrees to 150degrees. The difractogram for the undoped diamond 
                         film show intense peaks from the (111), (220), (311), (400) and 
                         (331) crystallographic planes. For the boron-doped films a set of 
                         new diffraction lines appear and their intensities increase 
                         considerably with the doping level. The set of diffraction peaks 
                         of similar intensities are related to a hexagonal structure and 
                         were assigned with hi-h confidence to tungsten carbide. This 
                         reveals that the boron-doping process in HFCVD facilitates the 
                         incorporation of tungsten carbide from the filament in the diamond 
                         film. The FWHM analysis of the diamond diffraction peaks shows a 
                         dependence of film crystallinity with doping level with a definite 
                         maximum at approximately 2.3 X 10(19) boron/cm(3).",
           copyholder = "SID/SCD",
            isbn/issn = "0925-9635",
                 issn = "0925-9635",
             language = "en",
           targetfile = "1-s2.0-S0925963501005738-main.pdf",
        urlaccessdate = "29 jun. 2024"
}