@Article{VoluZiDySaJaVa:2023:NeTwMe,
author = "Volu, Ren{\^e} Martins and Zilnyk, Kahl and Dyer, Silvelene
Alessandra Silva and Santos, Claudio Luis dos and Jakutis Neto,
Jonas and Vasconcelos, Get{\'u}lio de",
affiliation = "{Instituto Tecnol{\'o}gico de Aeron{\'a}utica (ITA)} and
{Instituto Tecnol{\'o}gico de Aeron{\'a}utica (ITA)} and
{Instituto Nacional de Pesquisas Espaciais (INPE)} and {Instituto
de Estudos Avan{\c{c}}ados (IEAv)} and {Instituto
Tecnol{\'o}gico de Aeron{\'a}utica (ITA)} and {Instituto de
Estudos Avan{\c{c}}ados (IEAv)}",
title = "A New Two-Step Method for Laser Cladding of Silicon Carbide in
Wc-Co Substrates",
journal = "Materials Research",
year = "2023",
volume = "26",
pages = "26",
keywords = "Laser cladding, cutting tools, tungsten carbide, silicon
carbide.",
abstract = "WC-Co cutting tools are widely used by the metalworking industry.
In order to improve the properties of these tools, research on the
application of wear-resistant coatings, such as polycrystalline
diamond, are of great importance to several applications. It is
known that the occurrence of high-stress levels between the
coating and the substrate can lead to adhesion failures. One
strategy to minimize these failures is applying an intermediate
layer of SiC. In this work, the deposition of a SiC layer was
carried out by a novel two-step laser cladding approach. Instead
of cladding directly the presynthesized SiC on the substrates, a
200 µm silicon powder layer was pre-deposited on the WC-Co
substrates and then irradiated with a 30 W CO2 laser. To improve
metallurgical bonding between the tungsten and the Si layer, all
substrates were chemically attacked. This attack allows cobalt
removal from the surface and increases surface roughness,
improving the laser cladding process. After the SiC laser
cladding, samples were coated with a 200 µm graphite powder layer
and irradiated again by a CO2 laser. The samples were
characterized by SEM, EDS, and XRD analysis. The results showed
that in the first step, an irradiation energy of about 0.27 J was
enough to fuse the silicon powder to the substrate and in the
second step, 0.13 J was enough to promote the reaction between
silicon, carbon and the WC substrate, resulting in the in-situ
synthesis of SiC. Finally, a new method was proposed for the
deposition of SiC on WC-Co based substrates and the observed
results allowed the proposal of an empirical equation to describe
the chemical reactions of the process.",
doi = "10.1590/1980-5373-mr-2022-0195",
url = "http://dx.doi.org/10.1590/1980-5373-mr-2022-0195",
issn = "1516-1439",
label = "lattes: 5184425009298603 3 VoluZiDySaJaVa:2023:NeTwMe",
language = "pt",
targetfile = "download.pdf",
urlaccessdate = "15 jun. 2024"
}