@MastersThesis{Costa:2007:CrCaEp,
               author = "Costa, Romina Paula de Castro",
                title = "Crescimento de camadas epitaxiais de CaF2 e BaF2 sobre substratos 
                         de sil{\'{\i}}cio para posterior desenvolvimento de 
                         heteroestruturas de PbTe e PbEute",
               school = "Instituto Nacional de Pesquisas Espaciais (INPE)",
                 year = "2007",
              address = "S{\~a}o Jos{\'e} dos Campos",
                month = "2007-02-16",
             keywords = "crescimento por MBE, interfaces CaF2, BaF2, Si, PbTe e PbEuTe, 
                         crescimento por epitaxia de feixe molecular, interfaces de 
                         fluoreto de c{\'a}lcio (CaF2) e fluoreto de B{\'a}rio (BaF2), 
                         growth MBE, buffer CaF2, BaF2, Si, PbTe and PbEuTe, growth 
                         molecular beam epitaxy, buffers fluorides calcium and barium.",
             abstract = "Este trabalho prop{\~o}e uma investiga{\c{c}}{\~a}o detalhada 
                         dos v{\'a}rios aspectos envolvidos no crescimento de interfaces 
                         de CaF2 e BaF2 sobre Si (111), utilizando-se a t{\'e}cnica de 
                         Molecular Beam Epitaxy (MBE) e an{\'a}lise in situ com Reflection 
                         High Energy Electron Diffraction (RHEED). O objetivo {\'e} 
                         conseguir estabelecer um conjunto m{\'{\i}}nimo de 
                         condi{\c{c}}{\~o}es para que se possam obter de forma 
                         sistem{\'a}tica e reprodut{\'{\i}}vel camadas de CaF2 e BaF2 
                         sobre Si (111) adequadas ao posterior crescimento de compostos 
                         IV-VI para a fabrica{\c{c}}{\~a}o monol{\'{\i}}tica de 
                         detectores de radia{\c{c}}{\~a}o infravermelha integrados ao Si. 
                         A Caracteriza{\c{c}}{\~a}o p{\'o}s-crescimento das camadas de 
                         CaF2 e BaF2 envolve medidas estruturais de raio-X de alta 
                         resolu{\c{c}}{\~a}o, nas configura{\c{c}}{\~o}es de Bragg 
                         Brentano, Rocking Curve e Reflex{\~a}o de raios-X em 
                         incid{\^e}ncia rasante, bem como medidas com o microsc{\'o}pio 
                         eletr{\^o}nico de varredura. As medidas permitem a 
                         obten{\c{c}}{\~a}o de informa{\c{c}}{\~a}o sobre a qualidade 
                         cristalina das camadas, o relaxamento das tens{\~o}es 
                         mec{\^a}nicas originadas devido {\`a} discrep{\^a}ncia de 
                         par{\^a}metros de rede entre as v{\'a}rias camadas, espessura e 
                         rugosidade do filme crescido. ABSTRACT: This work investigates in 
                         details the growth of CaF2 and BaF2 buffer layers on Si (111) 
                         substrates by using Molecular Beam Epitaxy (MBE) technique and in 
                         situ Reflection High Energy Electron Diffraction (RHEED) analisys. 
                         The main goal is to obtain a minimum set of conditions capable to 
                         make the growth of PbTe and PbSnTe compounds on buffered Si (111) 
                         substrates a reliable and reproducible procedure. The 
                         characterization after growth of the epitaxial CaF2 and BaF2 
                         layers involves high resolution x-rays diffraction measurements 
                         using Bragg Brentano method, rocking curves and grazing incidence 
                         x-ray reflectivity, as well as scanning electron microscopy. These 
                         measurements inform about crystal quality of the layers and strain 
                         releaf between buffer and substrate due to lattice parameters 
                         differences.",
            committee = "An, Chen Ying (presidente) and Boschetti, C{\'e}sar (orientador) 
                         and Guimar{\~a}es, Sonia",
           copyholder = "SID/SCD",
         englishtitle = "Epitaxial growth of CaF2 and BaF2 buffer layers on silicon 
                         substrates for PbTe PbEuTe heterostructure development",
             language = "pt",
                pages = "123",
                  ibi = "6qtX3pFwXQZGivnK2Y/Px6vM",
                  url = "http://urlib.net/ibi/6qtX3pFwXQZGivnK2Y/Px6vM",
           targetfile = "publicacao.pdf",
        urlaccessdate = "14 maio 2024"
}