@ElectronicSource{MorelhãoKyNeFoRaAb::HyReMu,
abstract = "Epitaxial films of bismuth telluride topological insulators have
received increasing attention due to potential applications in
spintronic and quantum computation. One of the most important
properties of epitaxial films is the presence of interface defects
due to lateral lattice mismatch since electrically active defects
can drastically compromise device performance. By describing
hybrid reflections in hexagonal bismuth telluride films on cubic
substrates, in-plane lattice mismatches were characterized with
accuracy at least 20 times better than using other X-ray
diffraction methods, providing clear evidence of 0.007% lateral
lattice mismatch, consistent with stress relaxation associated
with van der Waals gaps in the film structure.",
address = "S{\~a}o Jos{\'e} dos Campos",
affiliation = "{University of Guelph} and {University of Guelph} and {University
of Guelph} and {Instituto Nacional de Pesquisas Espaciais (INPE)}
and {Instituto Nacional de Pesquisas Espaciais (INPE)} and
{Instituto Nacional de Pesquisas Espaciais (INPE)}",
author = "Morelh{\~a}o, S{\'e}rgio L. and Kycia, Stefan and Netzke, Samuel
and Fornari, Celso Israel and Rappl, Paulo Henrique de Oliveira
and Abramof, Eduardo",
keywords = "epitaxial films, bismuth telluride topological insulator.",
language = "en",
lastupdatedate = "2018-03-13",
publisher = "Instituto and Nacional and de and Pesquisas and Espaciais",
ibi = "8JMKD3MGP3W34R/3QM2BUH",
url = "http://urlib.net/ibi/8JMKD3MGP3W34R/3QM2BUH",
targetfile = "v1.pdf",
title = "Hybrid reflections from multiple x-ray scattering in epitaxial
bismuth telluride topological insulator films",
typeofmedium = "On-line",
urlaccessdate = "23 abr. 2024"
}