@Article{MorelhãoKyNeFoRaAb:2019:DyDeVa,
               author = "Morelh{\~a}o, S{\'e}rgio L. and Kycia, Stefan W. and Netzke, 
                         Samuel and Fornari, Celso Israel and Rappl, Paulo Henrique de 
                         Oliveira and Abramof, Eduardo",
          affiliation = "{University of Guelph} and {University of Guelph} and 
                         {Universidade de S{\~a}o Paulo (USP)} and {Instituto Nacional de 
                         Pesquisas Espaciais (INPE)} and {Instituto Nacional de Pesquisas 
                         Espaciais (INPE)} and {Instituto Nacional de Pesquisas Espaciais 
                         (INPE)}",
                title = "Dynamics of defects in van der Waals epitaxy of bismuth telluride 
                         topological insulators",
              journal = "Journal of Physical Chemistry C",
                 year = "2019",
               volume = "123",
               number = "40",
                pages = "24818--24825",
                month = "Oct.",
             abstract = "Potential applications in spintronics and quantum information 
                         processing have motivated much recent research in epitaxial films 
                         of bismuth telluride. This system is also an example of van der 
                         Waals (vdW) epitaxy, where the interface coherence between the 
                         film and substrate is based on vdW bonds instead of strong ionic 
                         or covalent bonds. Because of the weakness of the vdW bonds, the 
                         overall quality of the epitaxial films is difficult to control and 
                         structural defects are easily introduced with a significant impact 
                         on the electronic phase diagram of the epitaxial films. To 
                         elucidate the evolution of defects as a function of the growth 
                         parameters, we combine nondestructive methods for electrical and 
                         structural analysis, as well as to establish intercorrelations 
                         between structural features and density of free charge carriers. 
                         It clearly shows that point defects and twinned domains favor 
                         p-type of charge carriers. Passivation of points defects by 
                         formation of metallic bismuth bilayers (BLs) drastically changes 
                         the whole film properties. By replacing vdW bonds with weak 
                         covalent bonds, the presence of BLs increases the film stiffness, 
                         leading to a smaller lattice misfit and a larger lateral lattice 
                         coherence length. Charge carriers are flipped to n-type. A few 
                         percent of BLs can be a strategy to achieve films with enhanced 
                         performance for device applications.",
                  doi = "10.1021/acs.jpcc.9b05377",
                  url = "http://dx.doi.org/10.1021/acs.jpcc.9b05377",
                 issn = "1932-7447",
             language = "en",
        urlaccessdate = "24 abr. 2024"
}