@Article{FornariBMPRTZKLMKVIRHRA:2020:InEuBi,
               author = "Fornari, Celso Israel and Bentmann, Hendrik and Morelh{\~a}o, 
                         S{\'e}rgio L. and Peixoto, Thiago and Rappl, Paulo Henrique de 
                         Oliveira and Tcakaev, Abdul and Zabolotnyy, Volodymyr and Kamp, 
                         Martin and Lee, Tien-Lin and Min, Chul-Hee and Kagerer, Philipp 
                         and Vidal, Raphael and Isaeva, Anna and Ruck, Michael and Hinkov, 
                         Vladimir and Reinert, Friedrich and Abramof, Eduardo",
          affiliation = "{Universit{\"a}t W{\"u}rzburg} and {Universit{\"a}t 
                         W{\"u}rzburg} and {Universidade de S{\~a}o Paulo (USP)} and 
                         {Universit{\"a}t W{\"u}rzburg} and {Instituto Nacional de 
                         Pesquisas Espaciais (INPE)} and {Universit{\"a}t W{\"u}rzburg} 
                         and {Universit{\"a}t W{\"u}rzburg} and {Universit{\"a}t 
                         W{\"u}rzburg} and {Harwell Science and Innovation Campus} and 
                         {Universit{\"a}t W{\"u}rzburg} and {Universit{\"a}t 
                         W{\"u}rzburg} and {Universit{\"a}t W{\"u}rzburg} and 
                         {Technische Universit{\"a}t Dresden} and {Technische 
                         Universit{\"a}t Dresden} and {Universit{\"a}t W{\"u}rzburg} and 
                         {Universit{\"a}t W{\"u}rzburg} and {Instituto Nacional de 
                         Pesquisas Espaciais (INPE)}",
                title = "Incorporation of europium in Bi2Te3 topological insulator 
                         epitaxial films",
              journal = "Journal of Physical Chemistry C",
                 year = "2020",
               volume = "124",
               number = "29",
                pages = "16048--16057",
                month = "July",
             abstract = "In the field of topological materials, the interaction between 
                         band topology and magnetism remains a current frontier for the 
                         advancement of new topological states and spintronic 
                         functionalities. Doping with rare-earth elements with large 
                         magnetic moments is a current approach to exploit the 
                         phenomenology of such interaction. However, dopant solubility into 
                         the main matrix plays a major role. In this sense, the present 
                         work is focused on elucidating how Eu incorporates into Bi2Te3 
                         lattice as a function of doping. This work reports a systematic 
                         investigation of the structural and electronic properties of 
                         bismuth telluride epitaxial layers doped with Eu. Bi2Te3 films 
                         were grown by molecular beam epitaxy on (111) BaF2 substrates with 
                         nominal Eu doping ranging from 0% up to 9%. X-ray diffraction 
                         analysis and scanning transmission electron microscopy reveal that 
                         Eu atoms enter substitutionally on Bi sites up to 4% of Eu doping. 
                         In contrast, the 9% Eu-doped sample contains epitaxially oriented 
                         nanoclusters of EuTe. X-ray photoelectron and absorption 
                         spectroscopies show that Eu atoms enter the Bi2Te3 crystal matrix 
                         in the divalent Eu2+ state for all Eu concentrations. 
                         Angle-resolved photoemission experiments indicate that the 
                         topological surface state is preserved in the presence of the 
                         local magnetic moments introduced by the Eu impurities.",
                  doi = "10.1021/acs.jpcc.0c05077",
                  url = "http://dx.doi.org/10.1021/acs.jpcc.0c05077",
                 issn = "1932-7447",
             language = "en",
        urlaccessdate = "18 abr. 2024"
}