@Article{MartinsDamCorTraBar:2021:MiReSt,
               author = "Martins, R{\^o}mulo Lu{\'{\i}}s and Damm, Djoille Denner and 
                         Corat, Evaldo Jos{\'e} and Trava-Airoldi, Vladimir Jesus and 
                         Barquete, Danilo Maciel",
          affiliation = "{Universidade Estadual de Santa Cruz (UESC)} and {Universidade 
                         Federal do Rec{\^o}ncavo Baiano} and {Instituto Nacional de 
                         Pesquisas Espaciais (INPE)} and {Instituto Nacional de Pesquisas 
                         Espaciais (INPE)} and {Universidade Estadual de Santa Cruz 
                         (UESC)}",
                title = "Mitigating residual stress of high temperature CVD diamond films 
                         on vanadium carbide coated steel",
              journal = "Journal of Vacuum Science and Technology A: Vacuum, Surfaces and 
                         Films",
                 year = "2021",
               volume = "39",
               number = "1",
                pages = "e013404",
             abstract = "In this work, a process condition was created to deposit a thin 
                         film of diamond on AISI O1 steel in a hot filament chemical vapor 
                         deposition (CVD) reactor. The main drawbacks to overcome are the 
                         diamond film high residual stresses caused by the difference 
                         between the coefficient of thermal expansion (CTE) of steel 
                         (\∼12 × 10\−6 K\−1 ) and diamond (0.8 × 
                         10\−6 K\−1 ). Our group proposed a diffusion 
                         vanadium carbide (VC) interlayer as a potential solution to 
                         mitigate carbon dissolution in the substrate and graphite 
                         formation instead of diamond; however, the intermediate CTE of VC 
                         still provides high thermal stress and delamination of the film. A 
                         solution was proposed by performing the diamond CVD on the AISI O1 
                         steel substrate above the steel austenitizing temperature, under 
                         the prospect that thermal stress will be minimized during cooling, 
                         since the return of steel from faced-centered cubic to 
                         body-centered cubic crystalline structures will cause substrate 
                         expansion. The lower residual stress was accomplished by the 
                         diamond growth temperature of 840 °C with all the steel substrate 
                         above the austenitizing critical temperature. The residual stress 
                         mitigation was 3.9 GPa, merging VC interlayer and high growth 
                         temperature, where numerical simulation exposed the same stress 
                         created by the growth temperature at 545 °C.",
                  doi = "10.1116/6.0000607",
                  url = "http://dx.doi.org/10.1116/6.0000607",
                 issn = "0734-2101",
             language = "en",
           targetfile = "martins_mitigating.pdf",
        urlaccessdate = "13 maio 2024"
}