@Article{AmaralJrSilFerBelBal:2015:MoEvPo,
author = "Amaral Junior, Miguel Angelo do and Silva, Belchior Elton Lima da
and Ferreira, Neiden{\^e}i Gomes and Beloto, Antonio Fernando and
Baldan, Maur{\'{\i}}cio Ribeiro",
affiliation = "{Instituto Nacional de Pesquisas Espaciais (INPE)} and {} and
{Instituto Nacional de Pesquisas Espaciais (INPE)} and {Instituto
Nacional de Pesquisas Espaciais (INPE)} and {Instituto Nacional de
Pesquisas Espaciais (INPE)}",
title = "Morphological evolution of the porous silicon surface for
different etching time and current density in hf-ethanol
solution",
journal = "Revista Brasileira de Aplica{\c{c}}{\~o}es de V{\'a}cuo",
year = "2015",
volume = "34",
number = "3",
pages = "89",
note = "{Setores de Atividade: Pesquisa e desenvolvimento
cient{\'{\i}}fico.}",
keywords = "Porous Sillicon, Photoluminescence, Scanning electron
microscopy.",
abstract = "Porous silicon samples were obtained by the anodization etching
process of a n-type silicon wafer. The pores formation was
investigated taking into account the anodization time. Scanning
Electron Microscopy and Optical Profilometry were used to
characterize the morphology, pore size, pore depth, thickness,
roughness, surface area and also the morphological evolution of
porous silicon layer. The formed porous silicon layer showed a
tendency to increase the pore size, pore depth, roughness and
surface area as a function of the etching time. The porous silicon
was obtained at different etching times and at a fixed current
density. The experimental results showed that the porosity of the
porous silicon prepared under different anodization times can be
controlled.",
doi = "10.17563/rbav.v34i3.989",
url = "http://dx.doi.org/10.17563/rbav.v34i3.989",
issn = "0101-7659",
label = "lattes: 3894119234731870 4 AmaralJrSilFerBelBal:2015:MoEvPo",
language = "en",
urlaccessdate = "12 maio 2024"
}