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2 referências similares encontradas (inclusive a original) buscando em 17 dentre 17 Arquivos.
Data e hora local de busca: 26/04/2024 06:21.
1. Identificação
Tipo de ReferênciaArtigo em Evento (Conference Proceedings)
Sitemtc-m21b.sid.inpe.br
Código do Detentorisadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S
Identificador8JMKD3MGP3W34P/3M9LML2
Repositóriosid.inpe.br/mtc-m21b/2016/08.16.18.54
Repositório de Metadadossid.inpe.br/mtc-m21b/2016/08.16.18.54.01
Última Atualização dos Metadados2018:06.04.02.41.01 (UTC) administrator
Chave SecundáriaINPE--PRE/
Chave de CitaçãoGalvãoVPMGCDM:2016:GrEpGr
TítuloGrow of epitaxial graphene on SiC thin film using CO2 laser beam
Ano2016
Data de Acesso26 abr. 2024
Tipo SecundárioPRE CI
2. Contextualização
Autor1 Galvão, Nierlly K. A. M.
2 Vasconcelos, Getúlio
3 Pessoa, Rodrigo Sávio
4 Machado, João Paulo Barros
5 Guerino, Marciel
6 Camus, Julien
7 Djouadi, Mohamed Abdou
8 Maciel, H. S.
Identificador de Curriculo1
2
3
4 8JMKD3MGP5W/3C9JHER
Grupo1
2
3
4 LAS-CTE-INPE-MCTI-GOV-BR
Afiliação1 Instituto Tecnológico de Aeronáutica (ITA)
2 Instituto de Estudos Avançados (IEAv)
3 Instituto Tecnológico de Aeronáutica (ITA)
4 Instituto Nacional de Pesquisas Espaciais (INPE)
5 Instituto Tecnológico de Aeronáutica (ITA)
6 Institut des Matériaux Jean Rouxel IMN
7 Institut des Matériaux Jean Rouxel IMN
8 Instituto Tecnológico de Aeronáutica (ITA)
Endereço de e-Mail do Autor1 nierlly@gmail.com
2
3
4 joao.machado@inpe.br
Nome do EventoInternational Conference on Advanced Nanomaterials, 7
Localização do EventoAveiro, Portugal
Data25-27 July
Histórico (UTC)2016-08-16 18:55:39 :: simone -> administrator :: 2016
2018-06-04 02:41:01 :: administrator -> simone :: 2016
3. Conteúdo e estrutura
É a matriz ou uma cópia?é a matriz
Estágio do Conteúdoconcluido
Transferível1
Tipo do ConteúdoExternal Contribution
ResumoWhen SiC is heated under specific annealing conditions, the layers of SiC crystals are decomposed. The Si sublimation occurs and the remaining carbon atoms form the epitaxial graphene layer1 . Usually this process takes place using induction furnaces at vacuum or at atmospheric pressure with an inert gas flow. The kinetics of formation, the structure and properties of graphene are influenced by the process parameters and also by the orientation and terminated face of the SiC wafer substrate1,2. Recently, the use of CO2 laser as a source of heating in graphene formation from single crystal of SiC and SiC particles have been reported2,3 . The use of this technique is still new and technical feasibility of grapheme formation using SiC thin films, to the best of our knowledge, were not yet reported. In this work, the viability of graphene growth by thermal decomposition of SiC thin films using CO2 laser was investigated. The SiC thin films were grown by plasma deposition technique using high-power impulse magnetron sputtering (HiPMS). Unlike what happens with graphene grown on single crystal SiC, the graphene was grown on the SiC thin film with undefined (SiC) facetermination. The obtained films were characterized thanks to chemical, structural and electrical analysis using the mapping RAMAN, atomic force microscopy (AFM), and 4 points probe, respectively.
ÁreaFISMAT
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4. Condições de acesso e uso
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simone
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5. Fontes relacionadas
Repositório Espelhourlib.net/www/2011/03.29.20.55
Unidades Imediatamente Superiores8JMKD3MGPCW/3ESR3H2
Acervo Hospedeirosid.inpe.br/mtc-m21b/2013/09.26.14.25.20
6. Notas
Campos Vaziosarchivingpolicy archivist booktitle callnumber copyholder copyright creatorhistory descriptionlevel dissemination doi e-mailaddress edition editor format isbn issn keywords label lineage mark nextedition notes numberoffiles numberofvolumes orcid organization pages parameterlist parentrepositories previousedition previouslowerunit progress project publisher publisheraddress rightsholder schedulinginformation secondarydate secondarymark serieseditor session shorttitle size sponsor subject targetfile tertiarymark tertiarytype type url versiontype volume
7. Controle da descrição
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1. Identificação
Tipo de ReferênciaArtigo em Evento (Conference Proceedings)
Sitemtc-m21c.sid.inpe.br
Código do Detentorisadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S
Identificador8JMKD3MGP3W34R/3R3TCTB
Repositóriosid.inpe.br/mtc-m21c/2018/05.07.16.54
Repositório de Metadadossid.inpe.br/mtc-m21c/2018/05.07.16.54.13
Última Atualização dos Metadados2020:12.07.21.11.37 (UTC) administrator
Chave SecundáriaINPE--PRE/
Chave de CitaçãoGalvãoGVPMMCD:2018:SiThFi
TítuloSic thin film growth by hipims technique aiming graphene synthesis
Ano2018
Data de Acesso26 abr. 2024
Tipo SecundárioPRE CN
2. Contextualização
Autor1 Galvão, Nierrly K. A. M.
2 Guerino, Marciel
3 Vasconcelos, Getúlio de
4 Pessoa, Rodrigo S.
5 Maciel, Homero S.
6 Machado, João Paulo Barros
7 Camus, Julien
8 Djouadi, Mohamed Abdou
Identificador de Curriculo1
2
3
4
5
6 8JMKD3MGP5W/3C9JHER
Grupo1
2
3
4
5
6 LABAS-COCTE-INPE-MCTIC-GOV-BR
Afiliação1 Instituto Tecnológico de Aeronáutica (ITA)
2 Instituto Tecnológico de Aeronáutica (ITA)
3 Instituto de Estudos Avançados (IEAv)
4 Instituto Tecnológico de Aeronáutica (ITA)
5 Instituto Tecnológico de Aeronáutica (ITA)
6 Instituto Nacional de Pesquisas Espaciais (INPE)
7 Université de Nantes
8 Université de Nantes
Endereço de e-Mail do Autor1
2
3
4
5
6 joao.machado@inpe.br
Nome do EventoEncontro Nacional de Física da Matéria Condensada (ENFMC)
Localização do EventoFoz do Iguaçu, PR
Data06-11 maio
Histórico (UTC)2018-05-07 16:55:15 :: simone -> administrator :: 2018
2020-12-07 21:11:37 :: administrator -> simone :: 2018
3. Conteúdo e estrutura
É a matriz ou uma cópia?é a matriz
Estágio do Conteúdoconcluido
Transferível1
Tipo do ConteúdoExternal Contribution
ResumoCurrently, the SiC has been highlighted in the field of two-dimensional materials. SiC wafer substrates are commonly used to carry out investigations on synthesis of graphene by thermal decomposition process. Under certain annealing conditions, the SiC crystals are decomposed. At the process, the Si sublimation occurs and the remaining carbon atoms form the epitaxial graphene layer [1-2]. Usually this process takes place using induction furnaces at vacuum or at atmospheric pressure with an inert gas flow [3]. The kinetics of formation, the structure and properties of graphene are influenced by the parameters of the heating process and also by the orientation and terminated face of the SiC wafer substrate [4]. This process has been successful to grow graphene layers on SiC but it involves high cost of material. Aiming a low-cost solution, in this work we propose the use of SiC thin films grown by plasma deposition technique using a high-power impulse magnetron sputtering (HiPMS) source. Recently, the use of CO2 laser as a source of heating for graphene formation from single crystal of SiC and SiC particles have been done [5]. The use of this technique is still new and unexplored and, to the best of our knowledge, the technical feasibility using SiC thin films was not reported. Herein, the thermal-decomposition was carried by two techniques: (i) carbon dioxide laser beam heating without vacuum or controlled atmosphere and (ii) furnace using work pressure 10−7 Torr. For thermal decomposition using furnace, a layer of Ni film was deposited on top of the SiC film. Contrary to that observed with graphene grown on the single crystal SiC wafer [4], using SiC thin films the graphene grows without the requirement of a (Si-C) face-termination. The obtained films were characterized by chemical, structural, morphological and electrical analysis using Raman spectroscopy, atomic force microscopy, and 4 points probe method.
ÁreaFISMAT
Arranjourlib.net > BDMCI > Fonds > Produção anterior à 2021 > LABAS > Sic thin film...
Conteúdo da Pasta docnão têm arquivos
Conteúdo da Pasta sourcenão têm arquivos
Conteúdo da Pasta agreement
agreement.html 07/05/2018 13:54 1.0 KiB 
4. Condições de acesso e uso
Idiomaen
Grupo de Usuáriossimone
Grupo de Leitoresadministrator
simone
Visibilidadeshown
Permissão de Atualizaçãonão transferida
5. Fontes relacionadas
Unidades Imediatamente Superiores8JMKD3MGPCW/3ESR3H2
Acervo Hospedeirourlib.net/www/2017/11.22.19.04
6. Notas
Campos Vaziosarchivingpolicy archivist booktitle callnumber copyholder copyright creatorhistory descriptionlevel dissemination doi e-mailaddress edition editor format isbn issn keywords label lineage mark mirrorrepository nextedition notes numberoffiles numberofvolumes orcid organization pages parameterlist parentrepositories previousedition previouslowerunit progress project publisher publisheraddress readpermission rightsholder schedulinginformation secondarydate secondarymark serieseditor session shorttitle size sponsor subject targetfile tertiarymark tertiarytype type url versiontype volume
7. Controle da descrição
e-Mail (login)simone
atualizar