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1. Identity statement
Reference TypeJournal Article
Siteplutao.sid.inpe.br
Holder Codeisadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S
IdentifierJ8LNKAN8RW/3AFLGS9
Repositorydpi.inpe.br/plutao/2011/09.22.19.47.13   (restricted access)
Last Update2011:10.20.12.00.36 (UTC) administrator
Metadata Repositorydpi.inpe.br/plutao/2011/09.22.19.47.14
Metadata Last Update2018:06.05.00.01.30 (UTC) administrator
DOI10.1088/0268-1242/26/10/105003
ISSN0268-1242
Labellattes: 3801575713681461 6 ZiminGoAmZoAbRa:2011:SpRaOf
Citation KeyZiminGoAmZoRa:2011:SpRaLe
TitleSputtering rates of lead chalcogenide-based ternary solid solutions during inductively coupled argon plasma treatment
Year2011
MonthAug.
Access Date2024, May 04
Secondary TypePRE PI
Number of Files1
Size307 KiB
2. Context
Author1 Zimin, S P
2 Gorlachev, E S
3 Amirov, I I
4 Zogg, H
5 Abramof
6 Rappl, Paulo Henrique de Oliveira
Resume Identifier1
2
3
4
5
6 8JMKD3MGP5W/3C9JJ37
Group1
2
3
4
5 LAS-CTE-INPE-MCT-BR
6 LAS-CTE-INPE-MCT-BR
Affiliation1 Microelectronics Department, Yaroslavl State University, Sovetskaya Street 14, Yaroslavl 150000, Russia
2 Microelectronics Department, Yaroslavl State University, Sovetskaya Street 14, Yaroslavl 150000, Russia
3 Yaroslavl Branch of the Institute of Physics and Technology, Russian Academy of Sciences, Universitetskaya Street 21, Yaroslavl 150007, Russia
4 Thin Film Physics Group, Laboratory for Solid State Physics, Swiss Federal Institute of Technology, ETH Technopark, CH-8005, Zurich, Switzerland
5 Instituto Nacional de Pesquisas Espaciais (INPE)
6 Instituto Nacional de Pesquisas Espaciais (INPE)
Author e-Mail Address1
2
3
4
5
6 rappl@las.inpe.br
e-Mail Addressrappl@las.inpe.br
JournalSemiconductor Science and Technology
Volume26
Number10
Pages105003
Secondary MarkB2_ASTRONOMIA_/_FÍSICA B1_ENGENHARIAS_II A2_ENGENHARIAS_III A1_ENGENHARIAS_IV B2_MATERIAIS
History (UTC)2011-09-23 14:11:21 :: lattes -> secretaria.cpa@dir.inpe.br :: 2011
2011-10-20 12:01:53 :: secretaria.cpa@dir.inpe.br -> administrator :: 2011
2018-06-05 00:01:30 :: administrator -> marciana :: 2011
3. Content and structure
Is the master or a copy?is the master
Content Stagecompleted
Transferable1
Content TypeExternal Contribution
Version Typepublisher
KeywordsProcesso de Sputtering em calcogenetos de chumbo
AbstractIn this work investigations of sputtering of monocrystalline (1 1 1)-oriented epitaxial films of semiconductor ternary solid solutions of Pb1−xSnxTe (x = 0.000.56), Pb1−xEuxTe (x = 0.000.05), Pb1−xSnxSe (x = 0.000.07), Pb1−xEuxSe (x = 0.000.16, x = 1.00), Pb1−xSnxS (x = 0.000.05) on Si(1 1 1) and BaF2(1 1 1) substrates in RF high-density low-pressure inductively coupled argon plasma were carried out. It is determined that sputtering rates for the studied materials retain high values typical for binary solutions PbTe, PbSe, PbS. The results indicate the interrelation of the sputtering rates of ternary compounds and of the sublimation energy of binary compounds that constitute a solid solution. The physical model of this characteristic property of lead chalcogenide-based ternary alloys based on the expansion of a classic Sigmund solid sputtering theory explaining the observed sputtering rate behavior with the alloy composition variation is proposed.
AreaFISMAT
Arrangementurlib.net > BDMCI > Fonds > Produção anterior à 2021 > LABAS > Sputtering rates of...
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4. Conditions of access and use
Languageen
Target File0268-1242_26_10_105003.pdf
User Groupadministrator
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secretaria.cpa@dir.inpe.br
Visibilityshown
Archiving Policydenypublisher denyfinaldraft12
Read Permissiondeny from all and allow from 150.163
Update Permissionnot transferred
5. Allied materials
Next Higher Units8JMKD3MGPCW/3ESR3H2
DisseminationWEBSCI; COMPENDEX.
Host Collectiondpi.inpe.br/plutao@80/2008/08.19.15.01
6. Notes
NotesSetores de Atividade: Atividades profissionais, científicas e técnicas, Pesquisa e desenvolvimento científico.
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