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1. Identity statement
Reference TypeJournal Article
Sitemarte3.sid.inpe.br
Holder Codeisadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S
Identifier6qtX3pFwXQZ3r59YCT/H3LjS
Repositorysid.inpe.br/iris@1905/2005/08.04.03.10.54   (restricted access)
Last Update2006:01.26.15.48.00 (UTC) administrator
Metadata Repositorysid.inpe.br/iris@1905/2005/08.04.03.11
Metadata Last Update2018:06.06.03.55.45 (UTC) administrator
Secondary KeyINPE-13389-PRE/8604
ISSN0257-8972
Label10529
Citation KeyBelotoUASSKRSP:2002:SpCoPo
TitleSponge-like and columnar porous silicon implanted with nitrogen by plasma immersion ion implantation (PIII)
Year2002
Secondary Date20020612
MonthJuly
Access Date2024, Apr. 27
Secondary TypePRE PI
Number of Files1
Size411 KiB
2. Context
Author1 Beloto, Antonio Fernando
2 Ueda, Mario
3 Abramof, Eduardo
4 Senna, José Roberto
5 Silva, M. D.
6 Kuranaga, C.
7 Reuther, H.
8 Silva, A. F.
9 Pepe, I.
Group1 LAS-INPE-MCT-BR
2 LAP-INPE-MCT-BR
Affiliation1 Instituto Nacional de Pesquisas Espaciais (INPE)
JournalSurface and Coatings Technology
Volume156
Number1-3
Pages267-271
History (UTC)2005-08-04 03:11:07 :: administrator -> jefferson ::
2006-01-26 15:48:32 :: jefferson -> administrator ::
2018-06-06 03:55:45 :: administrator -> marciana :: 2002
3. Content and structure
Is the master or a copy?is the master
Content Stagecompleted
Transferable1
Content TypeExternal Contribution
KeywordsFISICA E TECNOLOGIA DE MATERIAIS
silicon
plasma immersion ion implantation (PIII)
reflectance
solar-cells
emitter
Abstractponge-like and columnar porous silicon (PS)were prepared from p- and n-type (100)monocrystalline silicon wafers using different anodization conditions (hydrofluoric acid concentration, current density and anodization time)and then implanted with nitrogen by plasma immersion ion implantation (PIII). The effect of the implantation and of the compounds formed was analyzed by measuring the reflectance of the implanted samples for wavelengths between 220 and 800 nm. A reduction in reflectance in the ultraviolet (UV)region of the spectrum was observed for polished Si samples and for all kinds of PS samples. Increased UV-induced photoluminescence in these samples caused by the increase in absorption in the UV region is expected.
AreaFISMAT
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source Directory Contentthere are no files
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4. Conditions of access and use
Target Filebeloto.pdf
User Groupadministrator
jefferson
Visibilityshown
Copy HolderSID/SCD
Archiving Policydenypublisher denyfinaldraft24
Read Permissiondeny from all and allow from 150.163
5. Allied materials
Next Higher Units8JMKD3MGPCW/3ESR3H2
8JMKD3MGPCW/3ET2RFS
DisseminationWEBSCI; PORTALCAPES.
Host Collectionsid.inpe.br/banon/2001/04.03.15.36
6. Notes
Empty Fieldsalternatejournal archivist callnumber copyright creatorhistory descriptionlevel documentstage doi e-mailaddress electronicmailaddress format isbn language lineage mark mirrorrepository nextedition notes orcid parameterlist parentrepositories previousedition previouslowerunit progress project readergroup resumeid rightsholder schedulinginformation secondarymark session shorttitle sponsor subject tertiarymark tertiarytype typeofwork url versiontype
7. Description control
e-Mail (login)marciana
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