| 1. Identity statement | |
| Reference Type | Journal Article |
| Site | marte3.sid.inpe.br |
| Holder Code | isadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S |
| Identifier | 6qtX3pFwXQZ3r59YCT/H3Lwm |
| Repository | sid.inpe.br/iris@1905/2005/08.04.03.21 (restricted access) |
| Last Update | 2006:03.03.18.08.00 (UTC) administrator |
| Metadata Repository | sid.inpe.br/iris@1905/2005/08.04.03.22.01 |
| Metadata Last Update | 2018:06.06.03.55.46 (UTC) administrator |
| Secondary Key | INPE-13567-PRE/8777 |
| ISSN | 0103-9733 |
| Label | 10547 |
| Citation Key | HanamotoHeTrSoYaAb:2002:InLaIm |
| Title | Interfacial layers and impurity segregation in InP/In0.53Ga0.47As superlattices  |
| Project | TECMAT: Tecnologia de Materiais |
| Year | 2002 |
| Secondary Date | 20020912 |
| Month | June |
| Access Date | 2024, Apr. 27 |
| Secondary Type | PRE PN |
| Number of Files | 1 |
| Size | 293 KiB |
| 2. Context | |
| Author | 1 Hanamoto, L. K. 2 Henriques, A. B. 3 Tribuzy, C. V. B. 4 Souza, P. L. 5 Yavich, B. 6 Abramof, Eduardo |
| Group | 1 2 3 4 5 6 LAS-INPE-MCT-BR |
| Affiliation | 1 Universidade de São Paulo, Instituto de Física (USP) 2 Universidade de São Paulo, Instituto de Física (USP) 3 Pontifícia Universidade Católica, Centro de Estudos em Telecomunicações (PUC) 4 Pontifícia Universidade Católica, Centro de Estudos em Telecomunicações (PUC) 5 Pontifícia Universidade Católica, Centro de Estudos em Telecomunicações (PUC) 6 Instituto Nacional de Pesquisas Espaciais, Laboratório Associado de Sensores e Materiais, (INPE. LAS) |
| Journal | Brazilian Journal of Physics |
| Volume | 32 |
| Number | 2 |
| Pages | 334-337 |
| History (UTC) | 2005-08-04 03:22:02 :: administrator -> jefferson :: 2006-03-03 18:08:46 :: jefferson -> administrator :: 2006-11-14 18:52:54 :: administrator -> jefferson :: 2008-03-14 18:07:56 :: jefferson -> administrator :: 2018-06-06 03:55:46 :: administrator -> marciana :: 2002 |
| 3. Content and structure | |
| Is the master or a copy? | is the master |
| Content Stage | completed |
| Transferable | 1 |
| Content Type | External Contribution |
| Keywords | SENSORS AND MATERIALS Impurity Quantum wells Photoluminescence Growth MOVPE INP SENSORES E MATERIAIS Impurezas Fotoluminescência |
| Abstract | The interfaces in InP/In0.53Ga0.47As superlattices modulation doped with Si were investigated using magneto-transport, capacitance-voltage, and high resolution X-ray diffraction measurements. Results indicate that a thick interfacial layer is formed when InP is grown on top of InxGa1-xAs, and that Si atoms that fall in the interfacial layer have a high probability of not forming a shallow donor center. Using a simple theoretical model the width of the interfacial layer which was estimated to be 7 +/- 1 monolayers. |
| Area | FISMAT |
| Arrangement | urlib.net > BDMCI > Fonds > Produção anterior à 2021 > LABAS > Interfacial layers and... |
| doc Directory Content | access |
| source Directory Content | there are no files |
| agreement Directory Content | there are no files |
| 4. Conditions of access and use | |
| Language | en |
| Target File | 19.pdf |
| User Group | administrator jefferson |
| Visibility | shown |
| Copy Holder | SID/SCD |
| Archiving Policy | denypublisher denyfinaldraft12 |
| Read Permission | deny from all and allow from 150.163 |
| 5. Allied materials | |
| Next Higher Units | 8JMKD3MGPCW/3ESR3H2 |
| Dissemination | WEBSCI; PORTALCAPES; SCIELO. |
| Host Collection | sid.inpe.br/banon/2001/04.03.15.36 |
| 6. Notes | |
| Empty Fields | alternatejournal archivist callnumber copyright creatorhistory descriptionlevel documentstage doi e-mailaddress electronicmailaddress format isbn lineage mark mirrorrepository nextedition notes orcid parameterlist parentrepositories previousedition previouslowerunit progress readergroup resumeid rightsholder schedulinginformation secondarymark session shorttitle sponsor subject tertiarymark tertiarytype typeofwork url versiontype |
| 7. Description control | |
| e-Mail (login) | marciana |
| update | |