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1. Identity statement
Reference TypeJournal Article
Sitemtc-m16.sid.inpe.br
Holder Codeisadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S
Identifier6qtX3pFwXQZ3r59YDa/FBnEL
Repositorysid.inpe.br/iris@1916/2005/03.30.14.38   (restricted access)
Last Update2005:03.30.03.00.00 (UTC) administrator
Metadata Repositorysid.inpe.br/iris@1916/2005/03.30.14.38.29
Metadata Last Update2018:06.05.01.20.19 (UTC) administrator
Secondary KeyINPE-12283-PRE/7605
ISSN0026-2692
Citation KeyUetaABCMRBF:2002:IVCoHe
TitleIV-VI Compound heterostructures grown by molecular beam epitaxy
ProjectTECMAT: Tecnologia de materiais
Year2002
MonthApr.
Access Date2024, Apr. 28
Secondary TypePRE PI
Number of Files1
Size136 KiB
2. Context
Author1 Ueta, Antonio Yukio
2 Abramof, Eduardo
3 Boschetti, Cesar
4 Closs, Humberto
5 Motisuke, Paulo
6 Rappl, Paulo Henrique de Oliveira
7 Bandeira, Iraja Newton
8 Ferreira, S. O.
Resume Identifier1 8JMKD3MGP5W/3C9JGJU
2 8JMKD3MGP5W/3C9JGUH
3 8JMKD3MGP5W/3C9JGRJ
4
5 8JMKD3MGP5W/3C9JJ39
6 8JMKD3MGP5W/3C9JJ37
7 8JMKD3MGP5W/3C9JHDG
Group1 LAS-INPE-MCT-BR
2 LAS-INPE-MCT-BR
3 LAS-INPE-MCT-BR
4 LAS-INPE-MCT-BR
5 LAS-INPE-MCT-BR
6 LAS-INPE-MCT-BR
7 LAS-INPE-MCT-BR
Affiliation1 Instituto Nacional de Pesquisas Espaciais, Laboratório Associado de Sensores e Materiais (INPE.LAS)
2 Instituto Nacional de Pesquisas Espaciais, Laboratório Associado de Sensores e Materiais (INPE.LAS)
3 Instituto Nacional de Pesquisas Espaciais, Laboratório Associado de Sensores e Materiais (INPE.LAS)
4 Instituto Nacional de Pesquisas Espaciais, Laboratório Associado de Sensores e Materiais (INPE.LAS)
5 Instituto Nacional de Pesquisas Espaciais, Laboratório Associado de Sensores e Materiais (INPE.LAS)
6 Instituto Nacional de Pesquisas Espaciais, Laboratório Associado de Sensores e Materiais (INPE.LAS)
7 Instituto Nacional de Pesquisas Espaciais, Laboratório Associado de Sensores e Materiais (INPE.LAS)
8 Universidade Federal de Viçosa, Departamento de Física
JournalMicroelectronics Journal
Volume33
Number4
Pages331-335
History (UTC)2005-03-30 14:38:30 :: sergio -> administrator ::
2006-09-28 22:24:05 :: administrator -> sergio ::
2008-01-07 12:52:40 :: sergio -> marciana ::
2008-02-26 16:52:29 :: marciana -> administrator ::
2018-06-05 01:20:19 :: administrator -> marciana :: 2002
3. Content and structure
Is the master or a copy?is the master
Content Stagecompleted
Transferable1
Content TypeExternal Contribution
KeywordsMATERIALS PHYSICS
Molecular beam epitaxy
Narrow gap semiconductors
Heterostructures
Multi-quantum wells
IV–VI compounds
Lead salts
Quantum well structures
PBTE/EUTE superlattices
Optical properties
Diode-lasers
Silicon
Strain
Arrays
PBSE
FÍSICA DE MATERIAIS
Epitáxia molecular
Semicondutores
Heteroestruturas
AbstractStructural and optical characterization of some IVVI superlattices (SL) and multi-quantum wells (MQW) grown by molecular beam epitaxy (MBE) on BaF2 (111) substrates are shown. Three different types of systems were investigated, namely, PbTe/PbSnTe, PbTe/SnTe and PbTe/PbEuTe. High-resolution X-ray diffraction analysis was performed to determine the strain in the structures. The analysis revealed sharp interfaces and good thickness control. The transition energies between the confined levels in the wells were obtained from the absorption steps observed in infrared transmission measurements. Preliminary results on PbTe/Si heterojunction grown by MBE are also presented.
AreaFISMAT
Arrangementurlib.net > BDMCI > Fonds > Produção anterior à 2021 > LABAS > IV-VI Compound heterostructures...
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4. Conditions of access and use
Languageen
Target FileIV-VI compound heterostructure.pdf
User Groupadministrator
marciana
sergio
Visibilityshown
Copy HolderSID/SCD
Archiving Policydenypublisher denyfinaldraft24
Read Permissiondeny from all and allow from 150.163
5. Allied materials
Next Higher Units8JMKD3MGPCW/3ESR3H2
DisseminationWEBSCI
Host Collectionsid.inpe.br/banon/2003/08.15.17.40
6. Notes
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7. Description control
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