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1. Identity statement
Reference TypeJournal Article
Sitemtc-m16.sid.inpe.br
Holder Codeisadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S
Identifier6qtX3pFwXQZ3r59YDa/FEhyh
Repositorysid.inpe.br/iris@1916/2005/04.04.14.42   (restricted access)
Last Update2005:04.04.03.00.00 (UTC) administrator
Metadata Repositorysid.inpe.br/iris@1916/2005/04.04.14.42.07
Metadata Last Update2018:06.05.01.28.21 (UTC) administrator
Secondary KeyINPE-12292-PRE/7612
ISSN0168-583X
0167-5087
Citation KeyAbramofBelGomBerReu:2000:AnXrRo
TitleAnalysis of X-ray rocking curves in (0 0 1) silicon crystals implanted with nitrogen by plasma immersion ion implantation
Year2000
Access Date2024, Apr. 27
Secondary TypePRE PI
Number of Files1
Size191 KiB
2. Context
Author1 Abramof, Eduardo
2 Beloto, Antonio Fernando
3 Gomes, Geraldo F.
4 Berni, Luis Angelo
5 Reuther, H.
Resume Identifier1 8JMKD3MGP5W/3C9JGUH
2 8JMKD3MGP5W/3C9JGJ8
Group1 LAS-INPE-MCT-BR
2 LAP-INPE-MCT-BR
Affiliation1 Laboratorio Associado de Sensores e Materiais, Instituto Nacional de Pesquisas Espaciais, CP515, 12201-970, S~ao Jose dos Campos
2 Research Center Rossendorf, Institute of Ion Beam Physics and Materials Research, Dresden, Germany
JournalNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
Volume161
Pages1054-1057
History (UTC)2006-01-23 09:54:21 :: sergio -> administrator ::
2007-04-04 20:50:36 :: administrator -> sergio ::
2008-01-07 12:52:40 :: sergio -> administrator ::
2018-06-05 01:28:21 :: administrator -> marciana :: 2000
3. Content and structure
Is the master or a copy?is the master
Content Stagecompleted
Transferable1
Content TypeExternal Contribution
KeywordsHigh resolution X-ray di€
raction
Plasma immersion ion implantation
Surface analysis
Silicon crystals
AbstractHigh-resolution X-ray diraction methods have been used to characterize nitrogen-doped silicon obtained by plasma immersion ion implantation (PIII). The Si wafers were implanted with the plasma potential controlled at 70 V, and a plasma density of 1:5 1010 cmÿ3. The high voltage pulser was operated with peak voltage of 10 kV, 6 ls pulse duration and repetition frequency of 20 Hz. Auger electron spectroscopy (AES) measurements were carried out revealing successful implantation of ions with accumulated nitrogen dose of 1:5 1017 cmÿ2. The (0 0 4) Si rocking curve (x-scan) was measured in a high resolution X-ray diractometer equipped with a Ge(2 2 0) four crystal monochromator before and after implantation. A small distortion of the Si(0 0 4)-rocking curve was clearly observed for the as-implanted sample. This rocking curve was simulated by dynamical theory of X-ray diraction, assuming a Gaussian strain distribution through the implanted region and using the data from the nitrogen pro®le obtained from the Auger measurements. With these assumptions, a good agreement between the measured and simulated rocking curves was obtained. Ó 2000 Elsevier Science B.V. All rights reserved.
AreaFISMAT
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4. Conditions of access and use
Languageen
Target Fileanalysis of x-ray.pdf
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sergio
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Archiving Policydenypublisher denyfinaldraft24
Read Permissiondeny from all and allow from 150.163
5. Allied materials
Next Higher Units8JMKD3MGPCW/3ESR3H2
8JMKD3MGPCW/3ET2RFS
DisseminationWEBSCI; PORTALCAPES; COMPENDEX.
Host Collectionsid.inpe.br/banon/2003/08.15.17.40
6. Notes
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