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1. Identity statement
Reference TypeJournal Article
Sitemtc-m16.sid.inpe.br
Holder Codeisadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S
Identifier6qtX3pFwXQZ3r59YDa/FEkxJ
Repositorysid.inpe.br/iris@1916/2005/04.04.17.02   (restricted access)
Last Update2005:04.04.03.00.00 (UTC) administrator
Metadata Repositorysid.inpe.br/iris@1916/2005/04.04.17.02.37
Metadata Last Update2018:06.05.01.20.19 (UTC) administrator
Secondary KeyINPE-12293-PRE/7613
ISSN0168-583X
0167-5087
Citation KeyBelotoUeAbSeLeSiRe:2001:PoSiIm
TitlePorous silicon implanted with nitrogen by plasma immersion ion implantation
Year2001
MonthApr.
Access Date2024, Apr. 27
Secondary TypePRE PI
Number of Files1
Size112 KiB
2. Context
Author1 Beloto, Antonio Fernando
2 Ueda, Mario
3 Abramof, Eduardo
4 Senna, Jose Roberto Sbragia
5 Leite, Nelia Ferreira
6 Silva, Marcos Dias da
7 Reuther, H.
Resume Identifier1 8JMKD3MGP5W/3C9JGJ8
2 8JMKD3MGP5W/3C9JHSB
3 8JMKD3MGP5W/3C9JGUH
4 8JMKD3MGP5W/3C9JHJK
5 8JMKD3MGP5W/3C9JHU5
6 8JMKD3MGP5W/3C9JHQB
Group1 LAS-INPE-MCT-BR
2 LAP-INPE-MCT-BR
Affiliation1 Laboratório Associado de Materiais e Sensores (LAS), Instituto Nacional de Pesquisas Espaciais (INPE), S.J. Campos, S. Paulo, Brazil
2 Research Center Rossendorf, Institute of Ion Beam Physics and Materials Research, Dresden, Germany
JournalNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
VolumeVolumes 175-177
Pages224-228
History (UTC)2005-04-04 17:38:34 :: sergio -> administrator ::
2006-09-28 22:24:07 :: administrator -> sergio ::
2008-01-07 12:52:40 :: sergio -> administrator ::
2018-06-05 01:20:19 :: administrator -> marciana :: 2001
3. Content and structure
Is the master or a copy?is the master
Content Stagecompleted
Transferable1
Content TypeExternal Contribution
KeywordsPorous silicon
Plasma immersion ion implantation
Reflectance
Photoluminescence
AbstractPorous silicon (PS) samples were prepared on (1 0 0) monocrystalline silicon wafers and implanted with nitrogen by plasma immersion ion implantation (PIII). Characterization by Auger electron spectroscopy (AES) showed the presence of the implanted nitrogen and also SiO2 and Si3N4 compounds on the sample surfaces. The effect of the implantation and consequently of the compounds was analyzed measuring the reflectance for wavelengths between 200 nm and 800 nm on the implanted samples. The results show a strong reduction of the reflectance in the ultraviolet region of the spectrum, in agreement with a tendency for the intensity of the peak of the ultraviolet excited photoluminescence to increase with the PIII treatment time. These characteristics can be explored and appropriately used in the fabrication of optoelectronics devices based on PS.
AreaFISMAT
Arrangement 1urlib.net > BDMCI > Fonds > Produção anterior à 2021 > LABAS > Porous silicon implanted...
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4. Conditions of access and use
Languageen
Target Fileporous silicon.pdf
User Groupadministrator
sergio
Visibilityshown
Copy HolderSID/SCD
Archiving Policydenypublisher denyfinaldraft24
Read Permissiondeny from all and allow from 150.163
5. Allied materials
Next Higher Units8JMKD3MGPCW/3ESR3H2
8JMKD3MGPCW/3ET2RFS
DisseminationWEBSCI; PORTALCAPES; COMPENDEX.
Host Collectionsid.inpe.br/banon/2003/08.15.17.40
6. Notes
Empty Fieldsalternatejournal archivist callnumber copyright creatorhistory descriptionlevel documentstage doi e-mailaddress electronicmailaddress format isbn label lineage mark mirrorrepository nextedition notes number orcid parameterlist parentrepositories previousedition previouslowerunit progress project readergroup rightsholder schedulinginformation secondarydate secondarymark session shorttitle sponsor subject tertiarymark tertiarytype typeofwork url versiontype
7. Description control
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