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1. Identity statement
Reference TypeJournal Article
Sitemtc-m16.sid.inpe.br
Holder Codeisadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S
Identifier6qtX3pFwXQZ3r59YDa/FEm5L
Repositorysid.inpe.br/iris@1916/2005/04.04.17.25   (restricted access)
Last Update2005:04.04.03.00.00 (UTC) administrator
Metadata Repositorysid.inpe.br/iris@1916/2005/04.04.17.25.05
Metadata Last Update2018:06.05.01.20.19 (UTC) administrator
Secondary KeyINPE-12294-PRE/7614
ISSN0168-583X
0167-5087
Citation KeyAbramofBelUedGünReu:2001:ReSpMa
TitleReciprocal space mapping of silicon implanted with nitrogen by plasma immersion ion implantation
Year2001
MonthApr.
Access Date2024, Apr. 28
Secondary TypePRE PI
Number of Files1
Size113 KiB
2. Context
Author1 Abramof, Eduardo
2 Beloto, Antonio Fernando
3 Ueda, Mario
4 Günzel, R.
5 Reuther, H.
Resume Identifier1 8JMKD3MGP5W/3C9JGUH
2 8JMKD3MGP5W/3C9JGJ8
3 8JMKD3MGP5W/3C9JHSB
Group1 LAS-INPE-MCT-BR
2 LAP-INPE-MCT-BR
Affiliation1 Laboratório Associado de Plasma, Instituto Nacional de Pesquisas Espaciais, CP515, 12201-970 São José dos Campos, SP, Brazil
2 Research Center Rossendorf, Institute for Ion Beam Physics and Materials Research, Dresden, Germany
JournalNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
Volume175-177
Pages229-234
History (UTC)2005-04-04 17:34:24 :: sergio -> administrator ::
2006-09-28 22:24:08 :: administrator -> sergio ::
2008-01-07 12:52:40 :: sergio -> administrator ::
2018-06-05 01:20:19 :: administrator -> marciana :: 2001
3. Content and structure
Is the master or a copy?is the master
Content Stagecompleted
Transferable1
Content TypeExternal Contribution
KeywordsReciprocal space mapping
High-resolution X-ray diffraction
Plasma immersion ion implantation
Silicon crystals
AbstractNitrogen was implanted in (0 0 1) silicon wafers using 12 kV pulses in a glow-discharge plasma immersion ion implantation (PIII) system and at 35 keV in an electron-cyclotron-resonance (ECR) PIII facility. An implantation depth of 80 nm and a retained dose of approximately 3×1017 cm 2 were found, for both samples, from the nitrogen Auger profiles. Reciprocal space maps (RSMs) around the (0 0 4) and (1 1 3) Si lattice points were measured for the implanted and unimplanted Si wafers, using the high-resolution X-ray diffractometer in the triple axis configuration. An asymmetry in the reciprocal space coordinate Qz (perpendicular to the sample surface) indicates that the implanted atoms force an increase in the Si lattice parameter in this direction. A broadening in the Qx direction (parallel to the sample surface) was also observed, but with a less pronounced effect. For the sample implanted with higher energy, the shape of the map indicates a higher disorder in the crystal structure
AreaFISMAT
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4. Conditions of access and use
Languageen
Target Filereciprocal.pdf
User Groupadministrator
sergio
Visibilityshown
Copy HolderSID/SCD
Archiving Policydenypublisher denyfinaldraft24
Read Permissiondeny from all and allow from 150.163
5. Allied materials
Next Higher Units8JMKD3MGPCW/3ESR3H2
8JMKD3MGPCW/3ET2RFS
DisseminationWEBSCI; PORTALCAPES; COMPENDEX.
Host Collectionsid.inpe.br/banon/2003/08.15.17.40
6. Notes
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7. Description control
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