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1. Identity statement
Reference TypeJournal Article
Sitemtc-m16.sid.inpe.br
Holder Codeisadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S
Identifier6qtX3pFwXQZ3r59YDa/Gjsj8
Repositorysid.inpe.br/iris@1916/2005/05.31.19.00   (restricted access)
Last Update2005:05.31.03.00.00 (UTC) administrator
Metadata Repositorysid.inpe.br/iris@1916/2005/05.31.19.00.13
Metadata Last Update2018:06.05.01.28.24 (UTC) administrator
Secondary KeyINPE-12529-PRE/7828
ISSN0257-8972
Citation KeyUedaSteSpaBarNon:1999:AcPaPl
TitleActive and passive plasma spectroscopy in a plasma immersion ion implantation (PIII) experiment
Year1999
MonthFeb.
Access Date2024, Apr. 27
Secondary TypePRE PI
Number of Files1
Size144 KiB
2. Context
Author1 Ueda, Mario
2 Stellati, C.
3 Spassov, V. A.
4 Barroso, Joaquim José
5 Nono, Maria do Carmo de Andrade
Resume Identifier1 8JMKD3MGP5W/3C9JHSB
2
3
4
5 8JMKD3MGP5W/3C9JHRC
Group1 LAP-INPE-MCT-BR
2 LAS-INPE-MCT-BR
Affiliation1 Inst Nacl Pesquisas Espaciais INPE
2 Inst Aeronaut Technol, Sao Jose Dos Campos, SP Brazil
3 Univ Sofia, Fac Phys, Sofia, BU-1126 Bulgaria
JournalSurface and Coatings Technology
Volume112
Number1-3
Pages310-313
History (UTC)2005-05-31 19:00:13 :: sergio -> administrator ::
2007-04-04 23:59:40 :: administrator -> sergio ::
2008-01-07 12:49:48 :: sergio -> administrator ::
2008-06-10 22:03:31 :: administrator -> banon ::
2010-05-12 14:16:04 :: banon -> administrator ::
2018-06-05 01:28:24 :: administrator -> marciana :: 1999
3. Content and structure
Is the master or a copy?is the master
Content Stagecompleted
Transferable1
Content TypeExternal Contribution
Keywordsactive and passive spectroscopy
plasma diagnostics
plasma immersion ion implantation
surface modification
AbstractPlasma immersion ion implantation (PIII) is an emerging surface modification technique that can be used for three-dimensional ion implantation of non-planar components at low cost compared with the traditional line-of-sight implantation method using accelerators. We have developed a PIII system based on 2.45 GHz microwave-generated plasmas with densities of 10(16)-10(17) m(-3) and temperatures of few eV which allow high-ion-flux implantation in components of complex shape. These plasma parameters are also adequate for diagnostics using passive and active spectroscopic methods even in the presence of high voltages applied to the samples. The principles of active plasma spectroscopy (beam emission spectroscopy) for microwave PIII plasmas and its present status in our laboratory, as well as preliminary passive spectroscopy results, are described. Furthermore, results on the characterization of some irradiated samples and optimization of our PIII device are also presented. (C) 1999 Elsevier Science S.A. All rights reserved.
AreaFISMAT
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4. Conditions of access and use
LanguageEnglish
Target FileActive and passive plasma.pdf
User Groupadministrator
banon
sergio
Visibilityshown
Copy HolderSID/SCD
Archiving Policydenypublisher denyfinaldraft24
Read Permissiondeny from all and allow from 150.163
5. Allied materials
Next Higher Units8JMKD3MGPCW/3ESR3H2
8JMKD3MGPCW/3ET2RFS
DisseminationWEBSCI; PORTALCAPES.
Host Collectionsid.inpe.br/banon/2003/08.15.17.40
6. Notes
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7. Description control
e-Mail (login)marciana
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