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1. Identity statement
Reference TypeJournal Article
Sitemtc-m16.sid.inpe.br
Holder Codeisadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S
Identifier6qtX3pFwXQZ3r59YDa/JgGjw
Repositorysid.inpe.br/iris@1916/2005/11.25.17.28   (restricted access)
Last Update2005:11.25.17.28.00 (UTC) administrator
Metadata Repositorysid.inpe.br/iris@1916/2005/11.25.17.28.04
Metadata Last Update2018:06.05.01.16.14 (UTC) administrator
Secondary KeyINPE-13205-PRE/8461
ISSN0168-583X
0167-5087
Citation KeyReisBeloUeda:2005:AnEfSa
TitleAnnealing effects in samples of silicon implanted with helium by plasma immersion ion implantation
ProjectImplantação iônica por imersão em plasma (IIIP)
Year2005
MonthOct.
Access Date2024, Apr. 27
Secondary TypePRE PI
Number of Files1
Size206 KiB
2. Context
Author1 Reis, J. C. N.
2 Beloto, Antonio Fernando
3 Ueda, Mário
Resume Identifier1
2 8JMKD3MGP5W/3C9JGJ8
3 8JMKD3MGP5W/3C9JHSB
Group1 LAP-INPE-MCT-BR
2 LAP-INPE-MCT-BR
3 LAP-INPE-MCT-BR
Affiliation1 Instituto Nacional de Pesquisas Espaciais, Laboratório Associado de Plasma (INPE.LAP)
2 Instituto Nacional de Pesquisas Espaciais, Laboratório Associado de Plasma (INPE.LAP)
3 Instituto Nacional de Pesquisas Espaciais, Laboratório Associado de Plasma (INPE.LAP)
JournalNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
Volume240
Number1-2
Pages219-223
History (UTC)2005-12-07 13:39:56 :: sergio -> administrator ::
2007-04-04 20:50:35 :: administrator -> sergio ::
2008-01-07 12:53:13 :: sergio -> marciana ::
2008-02-25 14:28:03 :: marciana -> administrator ::
2018-06-05 01:16:14 :: administrator -> marciana :: 2005
3. Content and structure
Is the master or a copy?is the master
Content Stagecompleted
Transferable1
Content TypeExternal Contribution
KeywordsMATERIALS PHYSICS
PIII
Ion implantation
Photoluminescence
Annealing
Insulator material technology
Nitrogen
Temperature
PIII
FÍSICA DE MATERIAIS
Implantação iônica
Fotoluminescência
Tecnologia
Nitrogêneo
Temperatura
AbstractSilicon samples were implanted with helium using plasma immersion ion implantation (PIII). The effects of implantation were analyzed by Raman spectroscopy, scanning electron microscopy (SEM), atomic force microscopy (AFM) and reflectance measurements before and after PIII, and after annealing (325 degrees C, for 30, 60 and 90 min and 450 degrees C for 30 min, in nitrogen atmosphere). After annealing, large bubbles were observed from SEM images and a connection between surface microstructure and materials properties was analyzed through AFM measurements. It was observed a reduction of the reflectance and an increase of the peak intensity of the photoluminescence (PL) with the increasing of the annealing time.
AreaFISPLASMA
ArrangementFonds > Produção anterior à 2021 > LABAP > Annealing effects in...
doc Directory Contentaccess
source Directory Contentthere are no files
agreement Directory Contentthere are no files
4. Conditions of access and use
Languageen
Target Fileannealing effects.pdf
User Groupadministrator
marciana
sergio
Visibilityshown
Copy HolderSID/SCD
Archiving Policydenypublisher denyfinaldraft24
Read Permissiondeny from all and allow from 150.163
5. Allied materials
Next Higher Units8JMKD3MGPCW/3ET2RFS
DisseminationWEBSCI; PORTALCAPES; COMPENDEX.
Host Collectionsid.inpe.br/banon/2003/08.15.17.40
6. Notes
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7. Description control
e-Mail (login)marciana
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