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1. Identity statement
Reference TypeJournal Article
Sitemtc-m16.sid.inpe.br
Holder Codeisadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S
Identifier6qtX3pFwXQZ3r59YDa/KbR9p
Repositorysid.inpe.br/iris@1916/2006/02.16.17.22   (restricted access)
Last Update2006:02.16.17.22.00 (UTC) administrator
Metadata Repositorysid.inpe.br/iris@1916/2006/02.16.17.22.57
Metadata Last Update2018:06.05.01.20.24 (UTC) administrator
Secondary KeyINPE-13537-PRE/8750
ISSN0168-583X
0167-5087
Citation KeyUedaReGuBeAbBe:2001:HiDoNi
TitleHigh dose nitrogen and carbon shallow implantation in Si by plasma immersion ion implantation
Year2001
MonthApr
Access Date2024, Apr. 27
Secondary TypePRE PI
Number of Files1
Size109 KiB
2. Context
Author1 Ueda, Mario
2 Reuther, H.
3 Gunzel, R.
4 Beloto, Antonio Fernando
5 Abramof, Eduardo
6 Berni, Luis Angelo
Resume Identifier1 8JMKD3MGP5W/3C9JHSB
2
3
4 8JMKD3MGP5W/3C9JGJ8
5 8JMKD3MGP5W/3C9JGUH
Group1 LAP-INPE-MCT-BR
2 LAS-INPE-MCT-BR
Affiliation1 Instituto Nacional de Pesquisas Espaciais, Laboratório Associado de Plasmas, (INPE, LAP)
JournalNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
Volume175-177
Pages715-720
History (UTC)2006-02-16 17:22:58 :: vinicius -> administrator ::
2018-06-05 01:20:24 :: administrator -> marciana :: 2001
3. Content and structure
Is the master or a copy?is the master
Content Stagecompleted
Transferable1
Content TypeExternal Contribution
KeywordsPlasma immersion ion implantation
Silicon nitride
Silicon carbide
AbstractWe have performed plasma immersion ion implantation (PIII) processing to dope Si (0 0 1) wafers with nitrogen and carbon at high doses, relying on two different PIII systems: one at the Institute for Ion Beam Physics at Dresden and the other at INPE. In the first system based on an ECR plasma source, we carried out nitrogen and carbon implantation in Si samples at 35 keV, with delivered doses (DD) ranging from 0.6×1017 to 3.1×1018 cm−2. On the other hand, nitrogen implantation in Si samples at 12 keV with doses from 1.2×1017 to 2.4×1018 cm−2 were conducted in the second system with a glow discharge plasma source. Surface characterizations of these samples based on Auger electron spectroscopy (AES), surface profiler, Fourier transform infrared (FTIR) spectroscopy and a high-resolution X-ray diffractometer indicated different implanted profiles, maximum implanted depths, stresses and etching depths, as well as characteristic surface colors, depending on the doped species, energies and used delivered doses. Comparisons of these results and their interrelationship are discussed in this paper.
AreaFISPLASMA
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4. Conditions of access and use
Languageen
Target File59.pdf
User Groupadministrator
vinicius
Visibilityshown
Copy HolderSID/SCD
Archiving Policydenypublisher denyfinaldraft24
Read Permissiondeny from all and allow from 150.163
5. Allied materials
Next Higher Units8JMKD3MGPCW/3ESR3H2
8JMKD3MGPCW/3ET2RFS
DisseminationWEBSCI; PORTALCAPES; COMPENDEX.
Host Collectionsid.inpe.br/banon/2003/08.15.17.40
6. Notes
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7. Description control
e-Mail (login)marciana
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