Close

1. Identity statement
Reference TypeJournal Article
Sitemarte3.sid.inpe.br
Holder Codeisadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S
Identifier6qtX3pFwXQZsFDuKxG/zagrB
Repositorysid.inpe.br/marciana/2003/08.15.15.44   (restricted access)
Last Update2004:03.29.03.00.00 (UTC) administrator
Metadata Repositorysid.inpe.br/marciana/2003/08.15.15.44.24
Metadata Last Update2018:06.06.03.57.14 (UTC) administrator
Secondary KeyINPE-9885-PRE/5458
ISSN0168-583X
0167-5087
Citation KeyBelotoSiSeKuLeUe:2003:PhReMe
TitlePhotoluminescence and reflectance measurements on annealed porous silicon implanted with nitrogen by plasma immersion ion implantation (PIII)
Year2003
MonthMay
Access Date2024, Apr. 28
Secondary TypePRE PI
Number of Files1
Size171 KiB
2. Context
Author1 Beloto, Antonio Fernando
2 Silva, Marcos Dias da
3 Senna, José Roberto
4 Kuranaga, Carlos
5 Leite, Nélia Ferreira
6 Ueda, Mário
Group1 LAS-INPE-MCT-BR
2 LAP-INPE-MCT-BR
Affiliation1 Inst Nacl Pesquisas Espaciais, Lab Associado Sensores & Mat, BR-12245970 Sao Jose Dos Campos, Brazil
2 Inst Nacl Pesquisas Espaciais, Lab Associado Plasma, BR-12245970 Sao Jose Dos Campos, Brazil
JournalNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
Volume206
Pages677-681
History (UTC)2018-06-06 03:57:14 :: administrator -> marciana :: 2003
3. Content and structure
Is the master or a copy?is the master
Content Stagecompleted
Transferable1
Content TypeExternal Contribution
Keywordsporous silicon
plasma immersion ion implantation
photoluminescence
reflectance
AbstractPorous Silicon (PS), approximately 1 mum thick, was obtained from n-type (100) monocrystalline silicon wafers using two different anodization conditions. The PS samples were implanted with nitrogen by PIII and annealed at temperatures between 100 and 1000 degreesC. Photoluminescence (PL) and reflectance measurements on the implanted samples for wavelengths between 220 and 800 nm were carried out before and after annealing. Two peaks of PL intensity in the visible region. (640 and 730 nm) were observed. Increasing the annealing temperature reduced the PL intensity and changed the relative intensity between the peaks. A reduction in the ultraviolet reflectance was observed for polished implanted Si samples and for both types of implanted PS samples before annealing. After annealing, the reflectance decreased in the UV region up to 600 degreesC. Above 800 degreesC, there was an increase in reflectance, indicating occurrence of recrystallization
AreaFISMAT
Arrangement 1urlib.net > BDMCI > Fonds > Produção anterior à 2021 > LABAS > Photoluminescence and reflectance...
Arrangement 2urlib.net > BDMCI > Fonds > Produção anterior à 2021 > LABAP > Photoluminescence and reflectance...
doc Directory Contentaccess
source Directory Contentthere are no files
agreement Directory Contentthere are no files
4. Conditions of access and use
Languageen
Target FileAFBeloto_Article_NucInstrumMethodsPhysResB2003.pdf
User Groupadministrator
Visibilityshown
Copy HolderSID/SCD
Archiving Policydenypublisher denyfinaldraft24
Read Permissiondeny from all and allow from 150.163
5. Allied materials
Next Higher Units8JMKD3MGPCW/3ESR3H2
8JMKD3MGPCW/3ET2RFS
DisseminationWEBSCI; PORTALCAPES; COMPENDEX.
Host Collectionsid.inpe.br/banon/2001/04.03.15.36
6. Notes
Empty Fieldsalternatejournal archivist callnumber copyright creatorhistory descriptionlevel documentstage doi e-mailaddress electronicmailaddress format isbn label lineage mark mirrorrepository nextedition notes number orcid parameterlist parentrepositories previousedition previouslowerunit progress project readergroup resumeid rightsholder schedulinginformation secondarydate secondarymark session shorttitle sponsor subject tertiarymark tertiarytype typeofwork url versiontype
7. Description control
e-Mail (login)marciana
update 


Close